參數(shù)資料
型號(hào): MBM29LV200B-12
廠商: Fujitsu Limited
英文描述: CMOS 2M (256K×8/128K ×16) Bit Flash Memory(2M (256K×8/128K ×16)位 單5V 電源電壓閃速存儲(chǔ)器)
中文描述: 200萬的CMOS(256K × 8/128K × 16)位閃存(200萬(256K × 8/128K × 16)位單5V的電源電壓閃速存儲(chǔ)器)
文件頁數(shù): 42/50頁
文件大?。?/td> 469K
代理商: MBM29LV200B-12
42
MBM29LV200T
-10/-12
/MBM29LV200B
-10/-12
Fail
DQ
7
= Data
No
No
DQ
7
= Data
DQ
5
= 1
Pass
Yes
Yes
No
Read Byte
(DQ
0
to DQ
7
)
Addr. = VA
Read Byte
(DQ
0
to DQ
7
)
Addr. = VA
Yes
Start
Figure 20 Data Polling Algorithm
Note:
DQ
7
is rechecked even if DQ
5
= “1” because DQ
7
may change simultaneously with DQ
5
.
VA = Byte address for programming
= Any of the sector addresses
within the sector being erased
during sector erase or multiple
sector erases operation.
= XXXXH during sector erase or
multiple sector erases operation.
= Any of the sector addresses
within the sector not being
protected during sector erase or
multiple sector erases operation.
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