參數(shù)資料
型號(hào): MBM29LV200B-12
廠商: Fujitsu Limited
英文描述: CMOS 2M (256K×8/128K ×16) Bit Flash Memory(2M (256K×8/128K ×16)位 單5V 電源電壓閃速存儲(chǔ)器)
中文描述: 200萬(wàn)的CMOS(256K × 8/128K × 16)位閃存(200萬(wàn)(256K × 8/128K × 16)位單5V的電源電壓閃速存儲(chǔ)器)
文件頁(yè)數(shù): 44/50頁(yè)
文件大?。?/td> 469K
代理商: MBM29LV200B-12
44
MBM29LV200T
-10/-12
/MBM29LV200B
-10/-12
Setup Sector Addr.
(A
18
, A
17
, A
16
, A
15
, A
14
, A
13
, A
12
)
Activate WE Pulse
WE
=
V
IH
, CE
=
OE
=
V
IL
A
9
should remain V
ID
Yes
Yes
No
No
OE
=
V
ID
, A
9
=
V
ID
,
A
6
=
CE
=
V
IL
, RESET
=
V
IH
PLSCNT = 1
Time out 100
μ
s
Read from Sector
(Addr. = SA, A
1
= 1, A
0
= A
6
= 0)*
Remove V
ID
from A
9
Write Reset Command
Increment PLSCNT
No
Yes
Protect Another Sector
Start
Sector Protection
Completed
Data = 01H
PLSCNT = 25
Remove V
ID
from A
9
Write Reset Command
Device Failed
Figure 22 Sector Protection Algorithm
* :A
-1
is V
IL
on byte mode.
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