參數(shù)資料
型號(hào): MBM29LV200T-10
廠商: Fujitsu Limited
英文描述: CMOS 2M (256K×8/128K ×16) Bit Flash Memory(2M (256K×8/128K ×16)位 單5V 電源電壓閃速存儲(chǔ)器)
中文描述: 200萬(wàn)的CMOS(256K × 8/128K × 16)位閃存(200萬(wàn)(256K × 8/128K × 16)位單5V的電源電壓閃速存儲(chǔ)器)
文件頁(yè)數(shù): 11/50頁(yè)
文件大小: 469K
代理商: MBM29LV200T-10
11
MBM29LV200T
-10/-12
/MBM29LV200B
-10/-12
A
0
= V
IL
represents the manufacturer’s code (Fujitsu = 04H) and A
0
= V
IH
the device identifier code (MBM29LV200T
= 3BH and MBM29LV200B = BFH for
×
8 mode; MBM29LV200T = 223BH and MBM29LV200B = 22BFH for
×
16
mode). These two bytes/words are given in the tables 4.1 and 4.2. All identifiers for manufacturer and device
will exhibit odd parity with DQ
7
defined as the parity bit. In order to read the proper device codes when executing
the autoselect, A
1
must be V
IL
. (See Tables 4.1 and 4.2.)
相關(guān)PDF資料
PDF描述
MBM29LV200T-12 CMOS 2M (256K×8/128K ×16) Bit Flash Memory(2M (256K×8/128K ×16)位 單5V 電源電壓閃速存儲(chǔ)器)
MBM29LV200B-12 CMOS 2M (256K×8/128K ×16) Bit Flash Memory(2M (256K×8/128K ×16)位 單5V 電源電壓閃速存儲(chǔ)器)
MBM29LV200B 2 M (256 K ×8/128 K ×16)Flash Memory((256 K ×8/128 K ×16) 單3V 電源電壓閃速存儲(chǔ)器)
MBM29LV200T 2 M (256 K ×8/128 K ×16)Flash Memory((256 K ×8/128 K ×16) 單3V 電源電壓閃速存儲(chǔ)器)
MBM29LV320BE Triacs - I<sub>GT</sub>: 10 mA; I<sub>T</sub> (R<sub>MS</sub>): 1 A; V<sub>DRM</sub>: 800 V
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參數(shù)描述
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