參數(shù)資料
型號(hào)： MBM29LV200T-10
廠商： Fujitsu Limited
英文描述： CMOS 2M (256K×8/128K ×16) Bit Flash Memory(2M (256K×8/128K ×16)位 單5V 電源電壓閃速存儲(chǔ)器)
中文描述： 200萬的CMOS（256K × 8/128K × 16）位閃存（200萬（256K × 8/128K × 16）位單5V的電源電壓閃速存儲(chǔ)器）
文件頁(yè)數(shù)： 13/50頁(yè)
文件大?。?/td> 469K
代理商： MBM29LV200T-10
13
MBM29LV200T
-10/-12
/MBM29LV200B
-10/-12
To activate this mode, the programming equipment must force V
ID
on address pin A
9
and control pin OE, (suggest
V
ID
= 11.5 V), CE = V
IL
, and A
6
= V
IL
. The sector addresses (A
16
, A
15
, A
14
, A
13
, and A
12
) should be set to the sector
to be protected. Tables 5 and 6 define the sector address for each of the seven (7) individual sectors. Programming
of the protection circuitry begins on the falling edge of the WE pulse and is terminated with the rising edge of
the same. Sector addresses must be held constant during the WE pulse. Refer to figures 15 and 22 for sector
protection waveforms and algorithm.
To verify programming of the protection circuitry, the programming equipment must force V
ID
on address pin A
9
with CE and OE at V
IL
and WE at V
IH
. Scanning the sector addresses (A
16
, A
15
, A
14
, A
13
, and A
12
) while (A
6
, A
1
,
A
0
) = (0, 1, 0) will produce a logical “1” code at device output DQ
0
for a protected sector. Otherwise the devices
will produce 00H for unprotected sector. In this mode, the lower order addresses, except for A
0
, A
1
, and A
6
are
DON’T CARE. Address locations with A
1
= V
IL
are reserved for Autoselect manufacturer and device codes. A
-1
requires to apply to V
IL
on byte mode.
It is also possible to determine if a sector is protected in the system by writing an Autoselect command. Performing
a read operation at the address location XX02H, where the higher order addresses (A
16
, A
15
, A
14
, A
13
, and A
12
)
are the desired sector address will produce a logical “1” at DQ
0
for a protected sector. See Tables 4.1 and 4.2
for Autoselect codes.
Temporary Sector Unprotection
This feature allows temporary unprotection of previously protected sectors of the MBM29LV200T/200B devices
in order to change data. The Sector Unprotection mode is activated by setting the RESET pin to high voltage
(12 V). During this mode, formerly protected sectors can be programmed or erased by selecting the sector
addresses. Once the 12 V is taken away from the RESET pin, all the previously protected sectors will be protected
again. Refer to Figures 16 and 23.
RESET
Hardware Reset
The MBM29LV200T/200B devices may be reset by driving the RESET pin to V
IL
. The RESET pin has a pulse
requirement and has to be kept low (V
IL
) for at least 500 ns in order to properly reset the internal state machine.
Any operation in the process of being executed will be terminated and the internal state machine will be reset
to the read mode 20
μ
s after the RESET pin is driven low. Furthermore, once the RESET pin goes high, the
devices require an additional t
RH
= 50 ns before it will allow read access. When the RESET pin is low, the devices
will be in the standby mode for the duration of the pulse and all the data output pins will be tri-stated. If a hardware
reset occurs during a program or erase operation, the data at that particular location will be corrupted. Please
note that the RY/BY output signal should be ignored during the RESET pulse. Refer to Figure 12 for the timing
diagram. Refer to Temporary Sector Unprotection for additional functionality.
If hardware reset occurs during Embedded Erase Algorithm, there is a possibility that the erasing sector(s)
cannot be used.
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MBM29LV200T-12 CMOS 2M (256K×8/128K ×16) Bit Flash Memory(2M (256K×8/128K ×16)位 單5V 電源電壓閃速存儲(chǔ)器)
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