參數(shù)資料
型號(hào)： MBM29LV400T-10
廠商： Fujitsu Limited
英文描述： CMOS 4M (512K ×8/256K×16) Falsh Memory(512K ×8/256K×16位 單5V 電源電壓閃速存儲(chǔ)器)
中文描述： 的CMOS 4分（為512k × 8/256K × 16）Falsh存儲(chǔ)器（為512k × 8/256K × 16位單5V的電源電壓閃速存儲(chǔ)器）
文件頁數(shù)： 16/51頁
文件大小： 498K
代理商： MBM29LV400T-10
16
MBM29LV400T
-10/-12
/MBM29LV400B
-10/-12
Notes:
1. Address bits A
15
to A
17
= X = “H” or “L” for all address commands except or Program Address (PA) and
Sector Address (SA).
2. Bus operations are defined in Tables 2 and 3.
3. RA = Address of the memory location to be read.
PA = Address of the memory location to be programmed. Addresses are latched on the falling edge of
the WE pulse.
SA = Address of the sector to be erased. The combination of A
17
, A
16
, A
15
, A
14
, A
13
, and A
12
will uniquely
select any sector.
4. RD =Data read from location RA during read operation.
PD = Data to be programmed at location PA. Data is latched on the falling edge of WE.
5. The system should generate the following address patterns:
Word Mode: 5555H or 2AAAH to addresses A
0
to A
14
Byte Mode: AAAAH or 5555H to addresses A
-1
to A
14
* :Either of the two reset commands will reset the device.
Command Definitions
Device operations are selected by writing specific address and data sequences into the command register.
Writing incorrect address and data values or writing them in the improper sequence will reset the devices to the
read mode. Table 7 defines the valid register command sequences. Note that the Erase Suspend (B0H) and
Erase Resume (30H) commands are valid only while the Sector Erase operation is in progress. Moreover both
Read/Reset commands are functionally equivalent, resetting the device to the read mode. Please note that
commands are always written at DQ
0
to DQ
7
and DQ
8
to DQ
15
bits are ignored.
Read/Reset Command
In order to return from Autoselect mode or Exceeded Timing Limits (DQ
5
= 1) to read/reset mode, the read/reset
operation is initiated by writing the Read/Reset command sequence into the command register. Microprocessor
read cycles retrieve array data from the memory. The devices remain enabled for reads until the command
register contents are altered.
Table 7 MBM29LV400T/400B Command Definitions
Command
Sequence
Bus
Write
Cycles
Req'd
First Bus
Write Cycle
Second Bus
Write Cycle
Third Bus
Write Cycle
Fourth Bus
Read/Write
Cycle
Fifth Bus
Write Cycle
Sixth Bus
Write Cycle
Addr. Data Addr. Data Addr. Data Addr. Data Addr. Data Addr. Data
Read/Reset*
Word
Byte
Word
Byte
Word
Byte
Word
Byte
Word
Byte
Word
Byte
1
XXXXH
F0H
—
—
—
—
—
—
—
—
—
—
Read/Reset*
3
5555H
AAAAH
5555H
AAAAH
5555H
AAAAH
5555H
AAAAH
5555H
AAAAH
Erase can be suspended during sector erase with Addr. (“H” or “L”). Data (B0H)
Erase can be resumed after suspend with Addr. (“H” or “L”). Data (30H)
AAH
2AAAH
5555H
2AAAH
5555H
2AAAH
5555H
2AAAH
5555H
2AAAH
5555H
55H
5555H
AAAAH
5555H
AAAAH
5555H
AAAAH
5555H
AAAAH
5555H
AAAAH
F0H
RA
RD
—
—
—
—
Autoselect
3
AAH
55H
90H
—
—
—
—
—
—
Program
4
AAH
55H
A0H
PA
PD
—
—
—
—
Chip Erase
6
AAH
55H
80H
5555H
AAAAH
5555H
AAAAH
AAH
2AAAH
5555H
2AAAH
5555H
55H
5555H
AAAAH
10H
Sector Erase
6
AAH
55H
80H
AAH
55H
SA
30H
Sector Erase Suspend
Sector Erase Resume
相關(guān)PDF資料
PDF描述
MBM29LV400T-12 CMOS 4M (512K ×8/256K×16) Falsh Memory(512K ×8/256K×16位 單5V 電源電壓閃速存儲(chǔ)器)
MBM29LV400B-10 CMOS 4M (512K ×8/256K×16) Falsh Memory(512K ×8/256K×16位 單5V 電源電壓閃速存儲(chǔ)器)
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MBM29LV400TC-90 4M (512K X 8/256K X 16) BIT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MBM29LV400TC 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:4M (512K X 8/256K X 16) BIT
MBM29LV400TC-12 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:4M (512K X 8/256K X 16) BIT
MBM29LV400TC-12PBT 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:4M (512K X 8/256K X 16) BIT
MBM29LV400TC-12PCV 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:4M (512K X 8/256K X 16) BIT
MBM29LV400TC-12PF 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:4M (512K X 8/256K X 16) BIT
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