參數(shù)資料
型號： MBM29LV400T-10
廠商： Fujitsu Limited
英文描述： CMOS 4M (512K ×8/256K×16) Falsh Memory(512K ×8/256K×16位 單5V 電源電壓閃速存儲器)
中文描述： 的CMOS 4分（為512k × 8/256K × 16）Falsh存儲器（為512k × 8/256K × 16位單5V的電源電壓閃速存儲器）
文件頁數(shù)： 24/51頁
文件大?。?/td> 498K
代理商： MBM29LV400T-10
24
MBM29LV400T
-10/-12
/MBM29LV400B
-10/-12
I
ABSOLUTE MAXIMUM RATINGS
Storage Temperature ..................................................................................................–55
°
C to +125
°
C
Ambient Temperature with Power Applied...................................................................–25
°
C to +85
°
C
Voltage with Respect to Ground All pins except A
9
, OE, and RESET (Note 1)...........–0.5 V to V
CC
+0.5 V
V
CC
(Note 1) ................................................................................................................–0.5 V to +5.5 V
A
9
, OE, and RESET (Note 2)......................................................................................–0.5 V to +13.0 V
Notes:
1. Minimum DC voltage on input or I/O pins are –0.5 V. During voltage transitions, inputs may negative
overshoot V
SS
to –2.0 V for periods of up to 20 ns. Maximum DC voltage on output and I/O pins are V
CC
+0.5 V. During voltage transitions, outputs may positive overshoot to V
CC
+2.0 V for periods of up to
20 ns.
2. Minimum DC input voltage on A
9
, OE, and RESET pins are –0.5 V. During voltage transitions, A
9
, OE,
and RESET pins may negative overshoot V
SS
to –2.0 V for periods of up to 20 ns. Maximum DC input
voltage on A
9
, OE, and RESET pins are +13.0 V which may overshoot to 14.0 V for periods of up to
20 ns.
WARNING:
Semiconductor devices can be permanently damaged by application of stress (voltage, current,
temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.
I
RECOMMENDED OPERATING RANGES
Commercial Devices
Ambient Temperature (T
A
).........................................................................0
°
C to +70
°
C
V
CC
Supply Voltages
V
CC
for MBM29LV400T-12/B-12 ............................................................+2.7 V to +3.6 V
V
CC
for MBM29LV400T-10/B-10 ............................................................+3.0 V to +3.6 V
Operating ranges define those limits between which the functionality of the devices are guaranteed.
WARNING:
Recommended operating conditions are normal operating ranges for the semiconductor device. All
the device’s electrical characteristics are warranted when operated within these ranges.
Always use semiconductor devices within the recommended operating conditions. Operation outside
these ranges may adversely affect reliability and could result in device failure.
No warranty is made with respect to uses, operating conditions, or combinations not represented on
the data sheet. Users considering application outside the listed conditions are advised to contact their
FUJITSU representative beforehand.
相關PDF資料
PDF描述
MBM29LV400T-12 CMOS 4M (512K ×8/256K×16) Falsh Memory(512K ×8/256K×16位 單5V 電源電壓閃速存儲器)
MBM29LV400B-10 CMOS 4M (512K ×8/256K×16) Falsh Memory(512K ×8/256K×16位 單5V 電源電壓閃速存儲器)
MBM29LV400B CMOS 4M (512K ×8/256K×16) Falsh Memory(512K ×8/256K×16位 單5V 電源電壓閃速存儲器)
MBM29LV400T CMOS 4M (512K ×8/256K×16) Falsh Memory(512K ×8/256K×16位 單5V 電源電壓閃速存儲器)
MBM29LV400TC-90 4M (512K X 8/256K X 16) BIT
相關代理商/技術參數(shù)
參數(shù)描述
MBM29LV400TC 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:4M (512K X 8/256K X 16) BIT
MBM29LV400TC-12 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:4M (512K X 8/256K X 16) BIT
MBM29LV400TC-12PBT 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:4M (512K X 8/256K X 16) BIT
MBM29LV400TC-12PCV 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:4M (512K X 8/256K X 16) BIT
MBM29LV400TC-12PF 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:4M (512K X 8/256K X 16) BIT
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