參數(shù)資料
型號(hào)： MBM29LV651UE-90TN
廠(chǎng)商： SPANSION LLC
元件分類(lèi)： PROM
英文描述： 4M X 16 FLASH 3V PROM, 90 ns, PDSO48
封裝： PLASTIC, TSOP1-48
文件頁(yè)數(shù)： 11/57頁(yè)
文件大?。?/td> 640K
代理商： MBM29LV651UE-90TN
MBM29LV650UE90/651UE90
18
Write
Device erasure and programming are accomplished via the command register. The contents of the register serve
as inputs to the internal state machine. The state machine outputs dictate the function of the device.
The command register itself does not occupy any addressable memory location. The register is a latch used to
store the commands, along with the address and data information needed to execute the command. The
command register is written by bringing WE to VIL, while CE is at VIL and OE is at VIH. Addresses are latched on
the falling edge of WE or CE, whichever starts later; while data is latched on the rising edge of WE or CE,
whichever starts first. Standard microprocessor write timings are used.
Refer to s AC CHARACTERISTICS and s TIMING DIAGRAM.
Sector Group Protection
The MBM29LV650UE/651UE feature hardware sector group protection. This feature will disable both program
and erase operations in any combination of 32 sector groups of memory. Each sector group consists of 4
successive sectors. (See “Sector Group Address Table” in s FLEXIBLE SECTOR-ERASE ARCHITECTURE).
The sector group protection feature is enabled using programming equipment at the user’s site. The device is
shipped with all sector groups unprotected.
To activate this mode, the programming equipment must force VID on address pin A9 and control pin OE, CE =
VIL and A0 = A6 = VIL, A1 = VIH. The sector group addresses (A21, A20, A19, A18, and A17) should be set to the sector
to be protected. “Sector Group Address Table” in s FLEXIBLE SECTOR-ERASE ARCHITECTURE defines the
sector address for each of the 32 individual sectors. Programming of the protection circuitry begins on the falling
edge of the WE pulse and is terminated with the rising edge of the same. Sector group addresses must be held
constant during the WE pulse. See “(9) Sector Group Protection Timing Diagram” in s TIMING DIAGRAM and
“(5) Sector Group Protection Algorithm” in s FLOW CHART for sector group protection waveforms and algorithm.
To verify programming of the protection circuitry, the programming equipment must force VID on address pin A9
with CE and OE at VIL and WE at VIH. Scanning the sector group addresses (A21, A20, A19, A18, and A17) while
(A6, A1, A0) = (0, 1, 0) will produce a logic “1” code at device output DQ0 for a protected sector. Otherwise the
device will read 00h for unprotected sector. In this mode, the lower order addresses, except for A0, A1, and A6
are DON’T CARES (recommend to set VIL for other addresses pins). See “MBM29LV650UE/651UE User Bus
Operations Table” and “MBM29LV650UE/651UE Sector Group Protection Verify Autoselect Codes Table” in
s DEVICE BUS OPERATION for Autoselect codes. It is also possible to determine if a sector group is protected
in the system by writing an Autoselect command. See “Extended Command (3) Extended Sector Group
Protection” in s COMMAND DEFINITIONS.
Temporary Sector Group Unprotection
This feature allows temporary unprotection of previously protected sector groups of the MBM29LV650UE/651UE
devices in order to change data. The Sector Group Unprotection mode is activated by setting the RESET pin to
high voltage (VID). During this mode, formerly protected sector groups can be programmed or erased by selecting
the sector group addresses. Once the VID is taken away from the RESET pin, all the previously protected sector
groups will be protected again. Refer to “(9) Sector Group Protection Timing Diagram” in s TIMING DIAGRAM.
The MBM29LV650UE/651UE also have Extended Sector Group Protection function. See s COMMAND
DEFINITIONS.
This temporary sector group unprotect mode is disabled whenever the chip is in the HiddenROM mode. This
area cannot be programmed within this mode. Once this area is programmed, protection is for good.
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