參數(shù)資料
型號: MBM29LV651UE-90TN
廠商: SPANSION LLC
元件分類: PROM
英文描述: 4M X 16 FLASH 3V PROM, 90 ns, PDSO48
封裝: PLASTIC, TSOP1-48
文件頁數(shù): 27/57頁
文件大?。?/td> 640K
代理商: MBM29LV651UE-90TN
MBM29LV650UE90/651UE90
32
Write (Erase/Program) Operations
*1 : This does not include the preprogramming time.
*2 : This timing is for Sector Group Protection operation.
*3 : This timing is for Accelerated Program operation.
Parameter
Symbols
Value
Unit
JEDEC
Standard
Min
Typ
Max
Write Cycle Time
tAVAV
tWC
90
ns
Address Setup Time
tAVWL
tAS
0
ns
Address Hold Time
tWLAX
tAH
45
ns
Data Setup Time
tDVWH
tDS
35
ns
Data Hold Time
tWHDX
tDH
0
ns
Output Enable Setup Time
tOES
0
ns
Output Enable Hold
Time
Read
—tOEH
0
ns
Toggle and Data Polling
10
ns
Read Recover Time Before Write
tGHWL
0
ns
Read Recover Time Before Write
tGHEL
0
ns
CE Setup Time
tELWL
tCS
0
ns
WE Setup Time
tWLEL
tWS
0
ns
CE Hold Time
tWHEH
tCH
0
ns
WE Hold Time
tEHWH
tWH
0
ns
Write Pulse Width
tWLWH
tWP
35
ns
CE Pulse Width
tELEH
tCP
35
ns
Write Pulse Width High
tWHWL
tWPH
30
ns
CE Pulse Width High
tEHEL
tCPH
30
ns
Programming Operation
tWHWH1
16
s
Sector Erase Operation *1
tWHWH2
1
s
VCC Setup Time
tVCS
50
s
Rise Time to VID *2
—tVIDR
500
ns
Rise Time to VACC *3
—tVACCR
500
ns
Voltage Transition Time *2
—tVLHT
4
s
Write Pulse Width *2
—tWPP
100
s
OE Setup Time to WE Active *2
—tOESP
4
s
CE Setup Time to WE Active *2
—tCSP
4
s
RESET Pulse Width
tRP
500
ns
RESET High Level Period Before Read
tRH
200
ns
Delay Time from Embedded Output Enable
tEOE
90
ns
Erase Time-out Time
tTOW
50
s
Erase Suspend Transition Time
tSPD
20
s
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