參數(shù)資料
型號(hào)： MBM29LV651UE-90TN
廠商： SPANSION LLC
元件分類： PROM
英文描述： 4M X 16 FLASH 3V PROM, 90 ns, PDSO48
封裝： PLASTIC, TSOP1-48
文件頁(yè)數(shù)： 14/57頁(yè)
文件大?。?/td> 640K
代理商： MBM29LV651UE-90TN
MBM29LV650UE90/651UE90
20
s
s COMMAND DEFINITIONS
Device operations are selected by writing specific address and data sequences into the command register.
Writing incorrect data values or writing them in the improper sequence will reset the devices to the read mode.
The valid register command sequences is defined in “MBM29LV650UE/651UE Command Definitions Table” in
s DEVICE BUS OPERATION Note that the Erase Suspend (B0h) and Erase Resume (30h) commands are
valid only while the Sector Erase operation is in progress. Moreover both Read/Reset commands are functionally
equivalent, resetting the device to the read mode. Please note that commands are always written at DQ0 to DQ7
and DQ8 to DQ15 bits are ignored.
Read/Reset Command
In order to return from Autoselect mode or Exceeded Timing Limits to Read/Reset mode, the Read/Reset
operation is initiated by writing the Read/Reset command sequence into the command register. Microprocessor
read cycles retrieve array data from the memory. The devices remain enabled for reads until the command
register contents are altered.
The devices will automatically power up in the Read/Reset state. In this case, a command sequence is not
required to read data. Standard microprocessor read cycles will retrieve array data. This default value ensures
that no spurious alteration of the memory content occurs during the power transition. Refer to the
s AC CHARACTERISTICS and s TIMING DIAGRAM for the specific timing parameters.
Autoselect Command
Flash memories are intended for use in applications where the local CPU alters memory contents. As such,
manufacture and device codes must be accessible while the devices reside in the target system. PROM
programmers typically access the signature codes by raising A9 to a high voltage. However, multiplexing high
voltage onto the address lines is not generally desired system design practice.
The device contains an Autoselect command operation to supplement traditional PROM programming
methodology. The operation is initiated by writing the Autoselect command sequence into the command register.
The Autoselect command sequence is initiated by first writing two unlock cycles. This is followed by a third write
cycle that contains the address and the Autoselect command. Then the manufacture and device codes can be
read from the address, and an actual data of memory cell can be read from the another address.
Following the command write, a read cycle from address XX00h retrieves the manufacture code of 04h. A read
cycle from address XX01h returns the device code (MBM29LV650UE/651UE = 22D7h). A read cycle from
address XX03h returns the Extended Code (MBM29LV650UE = 0010h, MBM29LV651UE = 0000h). (See
“MBM29LV650UE/651UE Sector Group Protection Verify Autoselect Codes Table” in s DEVICE BUS
OPERATION.)
All manufacturer and device codes will exhibit odd parity with DQ7 defined as the parity bit. Sector state (protection
or unprotection) will be informed by address XX02h. Scanning the sector group addresses (A21, A20, A19, A18,
and A17) while (A6, A1, A0) = (0, 1, 0) will produce a logic “1” at device output DQ0 for a protected sector group.
The programming verification should be performed by verify sector group protection on the protected sector.
(See “User Bus Operations Table” in s DEVICE BUS OPERATION.)
To terminate the operation, it is necessary to write the Read/Reset command sequence into the register, and
also to write the Autoselect command during the operation, execute it after writing Read/Reset command
sequence.
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參數(shù)描述
MBM29LV651UE90TR 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:64M (4M x 16) BIT
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MBM29LV652UE-90 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:64M (4M X 16) BIT
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