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參數(shù)資料
| 型號： | MBM29LV651UE-90TN |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | 4M X 16 FLASH 3V PROM, 90 ns, PDSO48 |
| 封裝： | PLASTIC, TSOP1-48 |
| 文件頁數(shù)： | 17/57頁 |
| 文件大?。?/td> | 640K |
| 代理商： | MBM29LV651UE-90TN |
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MBM29LV650UE90/651UE90
23
After entering the erase-suspend-read mode, the user can program the device by writing the appropriate
command sequence for Program. This program mode is known as the erase-suspend-program mode. Again,
programming in this mode is the same as programming in the regular Program mode except that the data must
be programmed to sectors that are not erase-suspended. Successively reading from the erase-suspended sector
while the devices are in the erase-suspend-program mode will cause DQ2 to toggle. The end of the erase-
suspended Program operation is detected by the Data polling of DQ7 or by the Toggle Bit I (DQ6) which is the
same as the regular Program operation. Note that DQ7 must be read from the Program address while DQ6 can
be read from any address.
To resume the operation of Sector Erase, the Resume command (30h) should be written. Any further writes of
the Resume command at this point will be ignored. Another Erase Suspend command can be written after the
chip has resumed erasing.
Extended Command
(1) Fast Mode
MBM29LV650UE/651UE have Fast Mode function. This mode dispenses with the initial two unclock cycles
required in the standard program command sequence by writing Fast Mode command into the command register.
In this mode, the required bus cycle for programming is two cycles instead of four bus cycles in standard program
command. (Do not write erase command in this mode.) The read operation is also executed after exiting this
mode. To exit this mode, it is necessary to write Fast Mode Reset command into the command register. (Refer
to “(7) Extended Sector Group Protection Algorithm” in s FLOW CHART.) The VCC active current is required
even CE = VIH during Fast Mode.
(2) Fast Programming
During Fast Mode, the programming can be executed with two bus cycles operation. The Embedded Program
Algorithm is executed by writing program set-up command (A0h) and data write cycles (PA/PD). (Refer to
“(7) Extended Sector Group Protection Algorithm” in s FLOW CHART.)
(3) Extended Sector Group Protection
In addition to normal sector group protection, the MBM29LV650UE/651UE have Extended Sector Group
Protection as extended function. This function enables to protect sector group by forcing VID on RESET pin and
write a command sequence. Unlike conventional procedure, it is not necessary to force VID and control timing
for control pins. The only RESET pin requires VID for sector group protection in this mode. The extended sector
group protection requires VID on RESET pin. With this condition, the operation is initiated by writing the set-up
command (60h) into the command register. Then, the sector group addresses pins (A21, A20, A19, A18, and A17)
and (A6, A1, A0) = (0, 1, 0) should be set to the sector group to be protected (recommend to set VIL for the other
addresses pins), and write extended sector group protection command (60h). A sector group is typically protected
in 250
s. To verify programming of the protection circuitry, the sector group addresses pins (A21, A20, A19, A18,
and A17) and (A6, A1, A0) = (0, 1, 0) should be set and write a command (40h). Following the command write, a
logic “1” at device output DQ0 will produce for protected sector in the read operation. If the output data is logical
“0”, please repeat to write extended sector group protection command (60h) again. To terminate the operation,
it is necessary to set RESET pin to VIH. (Refer to “(11) Extended Sector Group Protection Timing Diagram” in
s TIMING DIAGRAM and “(8) Embedded ProgramTM Algorithm for Fast Mode” in s FLOW CHART.)
(4) CFI (Common Flash Memory Interface)
The CFI (Common Flash Memory Interface) specification outlines device and host system software interrogation
handshake which allows specific vendor-specified software algorithms to be used for entire families of devices.
This allows device-independent, JEDEC ID-independent, and forward-and backward-compatible software
support for the specified flash device families. Refer to CFI specification in detail.
The operation is initiated by writing the query command (98h) into the command register. Following the command
write, a read cycle from specific address retrieves device information. Please note that output data of upper byte
(DQ8 to DQ15) is “0” in word mode (16 bit) read. To terminate operation, it is necessary to write the read/reset
command sequence into the register. (See “Common Flash Memory Interface Code Table” in s FLEXIBLE
SECTOR-ERASE ARCHITECTURE.)
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MBM29LV651UE90TR | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:64M (4M x 16) BIT |
| MBM29LV652UE | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:64M (4M X 16) BIT |
| MBM29LV652UE-12 | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:64M (4M X 16) BIT |
| MBM29LV652UE-90 | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:64M (4M X 16) BIT |
| MBM29LV652UE90PBT | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:64M (4M X 16) BIT |
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