參數(shù)資料
型號(hào)： MBM29LV651UE-90TN
廠商： SPANSION LLC
元件分類： PROM
英文描述： 4M X 16 FLASH 3V PROM, 90 ns, PDSO48
封裝： PLASTIC, TSOP1-48
文件頁數(shù)： 9/57頁
文件大?。?/td> 640K
代理商： MBM29LV651UE-90TN
MBM29LV650UE90/651UE90
16
Description
A6 to A0 DQ15 to DQ0
Erase Block Region 1 Information
bit 15 to bit 0 : y
= number of sectors
bit 31 to bit 16 : z
= size
(z
×256 bytes)
2Dh
2Eh
2Fh
30h
007Fh
0000h
0001h
Erase Block Region 2 Information
bit 15 to bit 0 : y
= number of sectors
bit 31 to bit 16 : z
= size
(z
×256 bytes)
31h
32h
33h
34h
0000h
Query-unique ASCII string “PRI”
40h
41h
42h
0050h
0052h
0049h
Major version number, ASCII
43h
0031h
Minor version number, ASCII
44h
0031h
Address Sensitive Unlock
00h = Required
45h
0001h
Erase Suspend
00h
= Not supported
01h
= To read only
02h = To Read & Write
46h
0002h
Sector Protection
00h = Not Supported
X = Number of sectors in per group
47h
0004h
Sector Temporary Unprotection
00h
= Not supported
01h = Supported
48h
0001h
Sector Protection Algorithm
49h
0004h
Number of Sector for Bank 2
00h = Not Supported
4Ah
0000h
Burst Mode Type
00h = Not Supported
4Bh
0000h
Page Mode Type
00h = Not Supported
4Ch
0000h
VACC (Acceleration) Supply
Minimum
00h = Not Supported,
DQ7 to DQ4: 1 V,
DQ3 to DQ0: 100 mV
4Dh
00B5h
VACC (Acceleration) Supply
Maximum
00h = Not Supported,
DQ7 to DQ4: 1 V,
DQ3 to DQ0: 100 mV
4Eh
00C5h
Boot Type
04h = MBM29LV651UE
05h = MBM29LV650UE
4Fh
00XXh
Common Flash Memory Interface Code Table
Description
A6 to A0 DQ15 to DQ0
Query-unique ASCII string “QRY”
10h
11h
12h
0051h
0052h
0059h
Primary OEM Command Set
02h: AMD/FJ standard type
13h
14h
0002h
0000h
Address for Primary Extended
Table
15h
16h
0040h
0000h
Alternate OEM Command Set
(00h = not applicable)
17h
18h
0000h
Address for Alternate OEM
Extended Table
19h
1Ah
0000h
VCC Min. (write/erase)
DQ7 to DQ4: 1 V,
DQ3 to DQ0: 100 mV
1Bh
0027h
VCC Max. (write/erase)
DQ7 to DQ4: 1 V,
DQ3 to DQ0: 100 mV
1Ch
0036h
VPP Min. voltage
1Dh
0000h
VPP Max. voltage
1Eh
0000h
Typical timeout per single byte/
word write 2N
s
1Fh
0004h
Typical timeout for Min size buffer
write 2N
s
20h
0000h
Typical timeout per individual
sector erase 2N ms
21h
000Ah
Typical timeout for full chip erase
2N ms
22h
0000h
Max timeout for byte/word write
2N times typical (
s)
23h
0005h
Max timeout for buffer write 2N
times typical (
s)
24h
0000h
Max timeout per individual sector
erase 2N times typical (
s)
25h
0004h
Max timeout for full chip erase 2N
times typical (ms)
26h
0000h
Device Size = 2N byte
27h
0017h
Flash Device Interface
description 1h :
× 16
28h
29h
0001h
0000h
Max number of byte in
multi-byte write = 2N
2Ah
2Bh
0000h
Number of Erase Block Regions
within device
2Ch
0001h
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MBM29LV651UE90TR 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:64M (4M x 16) BIT
MBM29LV652UE 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:64M (4M X 16) BIT
MBM29LV652UE-12 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:64M (4M X 16) BIT
MBM29LV652UE-90 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:64M (4M X 16) BIT
MBM29LV652UE90PBT 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:64M (4M X 16) BIT
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