參數(shù)資料
型號: MBM29LV651UE-90TN
廠商: SPANSION LLC
元件分類: PROM
英文描述: 4M X 16 FLASH 3V PROM, 90 ns, PDSO48
封裝: PLASTIC, TSOP1-48
文件頁數(shù): 31/57頁
文件大?。?/td> 640K
代理商: MBM29LV651UE-90TN
MBM29LV650UE90/651UE90
36
Notes :
PA is address of the memory location to be programmed.
PD is data to be programmed at byte address.
DQ7 is the output of the complement of the data written to the device.
DOUT is the output of the data written to the device.
Figure indicates the last two bus cycles out of four bus cycle sequence.
(3) Alternate WE Controlled Program Operation Timing Diagram
tCH
tWP
tWHWH1
tWC
tAH
CE
OE
tRC
Address
Data
tAS
tOE
tWPH
tGHWL
tDH
DQ 7
PD
A0h
DOUT
WE
XXXh
PA
tOH
Data Polling
3rd Bus Cycle
tCS
tCE
tDS
DOUT
tDF
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