參數(shù)資料
型號(hào)： MBM29LV651UE-90TN
廠商： SPANSION LLC
元件分類： PROM
英文描述： 4M X 16 FLASH 3V PROM, 90 ns, PDSO48
封裝： PLASTIC, TSOP1-48
文件頁(yè)數(shù)： 23/57頁(yè)
文件大?。?/td> 640K
代理商： MBM29LV651UE-90TN
MBM29LV650UE90/651UE90
2
(Continued)
The MBM29LV650UE/651UE is entirely command set compatible with JEDEC single-power-supply Flash stan-
dard. Commands are written to the command register using standard microprocessor write timings. Register
contents serve as input to an internal state-machine which controls the erase and programming circuitry. Write
cycles also internally latch addresses and data needed for the programming and erase operations.
Typically, each sector can be programmed and verified in about 0.5 seconds.
A sector is typically erased and verified in 1.0 second. (If already completely preprogrammed.)
The device also features a sector erase architecture. The sector mode allows each sector to be erased and
reprogrammed without affecting other sectors. The MBM29LV650UE/651UE is erased when shipped from the
factory.
Internally generated and regulated voltages are provided for the program and erase operations. A low VCC detector
automatically inhibits write operations on the loss of power. The end of program or erase is detected by Data
Polling of DQ7, by the Toggle Bit feature on DQ6. Once the end of a program or erase cycle has been completed,
the devices internally reset to the read mode.
The devices electrically erase all bits within a sector simultaneously via Fowler-Nordhiem tunneling. The words
are programmed one word at a time using the EPROM programming mechanism of hot electron injection.
s
s FEATURES
0.23
m Process Technology
Single 3.0 V read, program and erase
Minimizes system level power requirements
Compatible with JEDEC-standards
Uses same software commands with single-power supply Flash
Address don’t care during the command sequence
Industry-standard pinouts
48-pin TSOP (1) (Package suffix: TN - Normal Bend Type, TR - Reversed Bend Type)
Minimum 100,000 program/erase cycles
High performance
90 ns maximum access time
Flexible sector architecture
128 32 K word sectors
Any combination of sectors can be concurrently erased.
Also supports full chip erase.
HiddenROM region
128 words of HiddenROM, accessible through a new “HiddenROM Enable” command sequence
Factory serialized and protected to provide a secure electronic serial number (ESN)
WP input pin
At VIL, allows protection of first or last 32 K word sector, regardless of sector protection/unprotection status
At VIH, allows removal of protection
MBM29LV650UE: has the function to protect the last 32 K word sector (SA 127).
MBM29LV651UE: has the function to protect the first 32 K word sector (SA 0).
ACC input pin
At VACC, increases program performance
Embedded EraseTM* Algorithms
Automatically pre-programs and erases the chip or any sector
Embedded programTM* Algorithms
Automatically writes and verifies data at specified address
Data Polling and Toggle Bit feature for detection of program or erase cycle completion
(Continued)
*: Embedded EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MBM29LV651UE90TR 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:64M (4M x 16) BIT
MBM29LV652UE 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:64M (4M X 16) BIT
MBM29LV652UE-12 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:64M (4M X 16) BIT
MBM29LV652UE-90 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:64M (4M X 16) BIT
MBM29LV652UE90PBT 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:64M (4M X 16) BIT
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