參數(shù)資料
型號: MCZ33927EK
廠商: 飛思卡爾半導體(中國)有限公司
英文描述: Transistor; Type: Amplifiers/Bipolar; VCEO (V): -100; Ic (A): -1; Pc (W): 0.9; hFE: 140 to 350; VCE (sat) (V) max: -0.5; Package: TO-92Mod
中文描述: 三相場效應(yīng)晶體管預(yù)驅(qū)動器
文件頁數(shù): 40/44頁
文件大?。?/td> 490K
代理商: MCZ33927EK
Analog Integrated Circuit Device Data
Freescale Semiconductor
40
33927
PROTECTION AND DIAGNOSIS FEATURES
Figure 20. Power Dissipation Profile of Application Not Using Charge Pump
Reference application with:
Output FET gate charge: 240 nC @ 10V
PWM Frequency: 20kHz
Switching Single Phase
No connections to PUMP or VPUMP
VPWR connected to Vbat
If VPWR is supplied by a separate pre-regulator, the power dissipation profile will be nearly flat at the value of the pre-regulator
voltage for all Vbat voltages.
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