參數(shù)資料
型號(hào)： MH28D72KLG-10
廠商： Mitsubishi Electric Corporation
英文描述： 9,663,676,416-BIT (134,217,728-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module
中文描述： 9663676416位（134217728 - Word的72位），雙數(shù)據(jù)速率同步DRAM模塊
文件頁(yè)數(shù)： 17/39頁(yè)
文件大?。?/td> 337K
代理商： MH28D72KLG-10
MITSUBISHI LSIs
MITSUBISHI ELECTRIC
MH28D72KLG-75,-10
9,663,676,416-BIT (134,217,728-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module
MIT-DS-0412-0.1
21.Mar.2001
Preliminary Spec.
Some contents are subject to change without notice.
17
AVERAGE SUPPLY CURRENT from Vdd
(Ta=0 ~ 70°C , Vdd = VddQ = 2.5 ± 0.2V, Vss = VssQ = 0V, Output Open, unless otherwise noted)
AC OPERATING CONDITIONS AND CHARACTERISTICS
(Ta=0 ~ 70°C , Vdd = VddQ = 2.5 ± 0.2V, Vss = VssQ = 0V, unless otherwise noted)
1394
908
983
4004
4259
3104
3269
3374
3629
1844
2009
1394
1469
1469
1214
1289
2744
2909
2520
2819
-10
-75
ACTIVE POWER-DOWN STANDBY CURRENT: One bank active;
power-down mode; CKE VIL (MAX); t CK = t CK MIN
mA
mA
mA
SELF REFRESH CURRENT: CKE 0.2V
AUTO REFRESH CURRENT: t RC = t RFC (MIN)
OPERATING CURRENT: Burst = 2; Writes; Continuous burst; One
bank active; Address and control inputs changing once per clock
cycle; CL = 2.5; t CK = t CK MIN; DQ, DM and DQS inputs changing
twice per clock cycle
OPERATING CURRENT: Burst = 2; Reads; Continuous burst;One
bank active; Address and control inputs changing once per clock
cycle; CL = 2.5; t CK = t CK MIN; IOUT = 0 mA
ACTIVE STANDBY CURRENT: /CS > VIH (MIN); CKE > VIH (MIN);
One bank; Active-Precharge; t RC = t RAS MAX; t CK = t CK MIN;
DQ,DM and DQS inputs changing twice per clock cycle; address and
other control inputs changing once per clock cycle
IDLE STANDBY CURRENT: /CS > VIH (MIN); All banks idle;
CKE > VIH (MIN); t CK = t CK MIN; Address and other control inputs
changing once per clock cycle
IDD2P
PRECHARGE POWER-DOWN STANDBY CURRENT: All banks idle;
power-down mode; CKE VIL (MAX); t CK = t CK MIN
mA
OPERATING CURRENT: One Bank; Active-Read-Precharge;
Burst = 2; t RC = t RC MIN; CL = 2.5; t CK = t CK MIN; IOUT= 0
mA;Address and control inputs changing once per clock cycle
OPERATING CURRENT: One Bank; Active-Precharge;
t RC = t RC MIN; t CK = t CK MIN; DQ, DM and DQS inputs changing
twice per clock cycle; address and control inputs changing once per
clock cycle
Parameter/Test Conditions
IDD4R
IDD3N
mA
mA
mA
mA
mA
mA
IDD6
IDD5
IDD4W
IDD3P
IDD2N
IDD1
IDD0
Notes
Unit
Limits(max)
Symbol
Symbol
Parameter/Test Conditions
Limits
Min.
Max.
Unit
VIH(AC)
VIL(AC)
VID(AC)
VIX(AC)
High-Level Input Voltage (AC)
Low-Level Input Voltage (AC)
Input Differential Voltage, CLK and /CLK
Input Crossing Point Voltage, CLK and /CLK
Vref + 0.35
Vref - 0.35
V
V
V
V
μA
0.7
0.5*V
DD
Q-0.2
V
DD
Q + 0.6
IOZ
I
i
Off-state Output Current /Q floating Vo=0~V
DD
Q
Input Current / VIN=0 ~ VddQ
μA
-5
-10
5
10
0.5*V
DD
Q+0.2
Notes
7
8
9
相關(guān)PDF資料
PDF描述
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