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參數(shù)資料
型號(hào)： MPC5553MZP132
廠商： Freescale Semiconductor
文件頁(yè)數(shù)： 10/68頁(yè)
文件大?。?/td> 0K
描述： IC MCU MPC5553 REV A 416-PBGA
產(chǎn)品培訓(xùn)模塊： MPC55xx PitchPak Family
標(biāo)準(zhǔn)包裝： 200
系列： MPC55xx Qorivva
核心處理器： e200z6
芯體尺寸： 32-位
速度： 132MHz
連通性： CAN，EBI/EMI，以太網(wǎng)，SCI，SPI
外圍設(shè)備： DMA，POR，PWM，WDT
輸入/輸出數(shù)： 220
程序存儲(chǔ)器容量： 1.5MB（1.5M x 8）
程序存儲(chǔ)器類型： 閃存
RAM 容量： 64K x 8
電壓 - 電源 (Vcc/Vdd)： 1.35 V ~ 1.65 V
數(shù)據(jù)轉(zhuǎn)換器： A/D 40x12b
振蕩器型： 外部
工作溫度： -40°C ~ 125°C
封裝/外殼： 416-BBGA
包裝： 托盤(pán)
配用： MPC5553EVBISYS-ND - KIT EVAL ISYSTEMS MPC5553
MPC5553EVBGHS-ND - KIT EVAL GREEN HILLS SOFTWARE
MPC5553EVB-ND - KIT EVAL MPC5553MZP132
MPC5553EVBE-ND - BOARD EVAL FOR MPC5553
MPC5553 Microcontroller Data Sheet, Rev. 4
Electrical Characteristics
Freescale Semiconductor
18
2 | V
DDA0 – VDDA1 | must be < 0.1 V.
3 V
PP can drop to 3.0 V during read operations.
4 If standby operation is not required, connect V
STBY to ground.
5 Applies to CLKOUT, external bus pins, and Nexus pins.
6 Maximum average RMS DC current.
7 Average current measured on Automotive benchmark.
8 Peak currents can be higher on specialized code.
9 High use current measured while running optimized SPE assembly code with all code and data 100% locked in cache
(0% miss rate) with all channels of the eMIOS and eTPU running autonomously, plus the eDMA transferring data continuously from
SRAM to SRAM. Higher currents are possible if an idle loop that crosses cache lines is run from cache. Design and write code to
avoid this condition.
10 The current specification relates to average standby operation after SRAM has been loaded with data. For power up current see
11 Power requirements for the V
DD33 supply depend on the frequency of operation, load of all I/O pins, and the voltages on the I/O
segments. Refer to Table 11 for values to calculate the power dissipation for a specific operation.
12 Power requirements for each I/O segment are dependent on the frequency of operation and load of the I/O pins on a particular I/O
segment, and the voltage of the I/O segment. Refer to Table 10 for values to calculate power dissipation for specific operation. The
total power consumption of an I/O segment is the sum of the individual power consumptions for each pin on the segment.
13 Absolute value of current, measured at V
IL and VIH.
14 Weak pullup/down inactive. Measured at V
DDE = 3.6 V and VDDEH = 5.25 V. Applies to pad types: pad_fc, pad_sh, and pad_mh.
15 Maximum leakage occurs at maximum operating temperature. Leakage current decreases by approximately one-half for each 8 oC
to 12 oC, in the ambient temperature range of 50 oC to 125 oC. Applies to pad types: pad_a and pad_ae.
16 V
SSA refers to both VSSA0 and VSSA1. | VSSA0 – VSSA1 | must be < 0.1 V.
17 Up to 0.6 V during power up and power down.
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