參數(shù)資料
型號(hào)： MPC5553MZP132
廠商： Freescale Semiconductor
文件頁(yè)數(shù)： 60/68頁(yè)
文件大?。?/td> 0K
描述： IC MCU MPC5553 REV A 416-PBGA
產(chǎn)品培訓(xùn)模塊： MPC55xx PitchPak Family
標(biāo)準(zhǔn)包裝： 200
系列： MPC55xx Qorivva
核心處理器： e200z6
芯體尺寸： 32-位
速度： 132MHz
連通性： CAN，EBI/EMI，以太網(wǎng)，SCI，SPI
外圍設(shè)備： DMA，POR，PWM，WDT
輸入/輸出數(shù)： 220
程序存儲(chǔ)器容量： 1.5MB（1.5M x 8）
程序存儲(chǔ)器類型： 閃存
RAM 容量： 64K x 8
電壓 - 電源 (Vcc/Vdd)： 1.35 V ~ 1.65 V
數(shù)據(jù)轉(zhuǎn)換器： A/D 40x12b
振蕩器型： 外部
工作溫度： -40°C ~ 125°C
封裝/外殼： 416-BBGA
包裝： 托盤
配用： MPC5553EVBISYS-ND - KIT EVAL ISYSTEMS MPC5553
MPC5553EVBGHS-ND - KIT EVAL GREEN HILLS SOFTWARE
MPC5553EVB-ND - KIT EVAL MPC5553MZP132
MPC5553EVBE-ND - BOARD EVAL FOR MPC5553
Revision History for the MPC5553 Data Sheet
MPC5553 Microcontroller Data Sheet, Rev. 4
Freescale Semiconductor
63
Table 33. Table and Figure Changes Between Rev. 2.0 and 3.0
Location
Description of Changes
Figure 1 MPC5500 Family Part Numbers:
Removed the 2 in the tape and reel designator in both the graphic and in the Tape and Reel Status text.
Changed Qualification Status by adding ‘, general market flow’ to the M designator, and added an ‘S’ designator
with the description of ‘Fully spec. qualified, automotive flow.
Table 1 (Orderable Part Numbers) Orderable Part Numbers:
Moved the ‘Lead-free’ or ‘Lead’ in the Package Description column to a second line and added ‘Pb-free’ and
‘SnPb’ respectively. Changed Lead to Leaded.
Footnote 2 changed to read:’ The lowest ambient operating temperature is referenced by TL; the highest ambient
operating temperature is referenced by TH.’
Footnote 3 changed to read: ‘Speed is the nominal maximum frequency. Max speed is the maximum speed
allowed including frequency modulation (FM): 82 MHz parts allow for 80 MHz system clock + 2% FM; 114 MHz
parts allow for 112 MHz system clock + 2% FM; and 132 MHz parts allow for 128 MHz system clock + 2% FM;.’
Table 2 (Absolute Maximum Ratings) Absolute Maximum Ratings:
Deleted Spec 3, “Flash core voltage.”
Spec 21, Added the name of the spec, ‘VRC33 to VDDSYN differential voltage,’ as well as the name and cross
reference to Table 9, DC Electrical Specifications, to which the Spec was moved.
Spec 28 “Maximum Solder Temperature”: Added two lines:
Lead-free (Pb-free) and Leaded (SnPb) with maximum values of 260 C and 245 C respectively.
Footnote 1, added: ‘a(chǎn)ny of’ between ‘beyond’ and ‘the listed maxima.’
Deleted footnote 2: ‘Absolute maximum voltages are currently maximum burn-in voltages. Absolute maximum
specifications for device stress have not yet been determined.’
Footnote 6 (now footnote 5): Changed to the following sentence to the end, “Internal structures hold the input
voltage greater than -1.0 V if the injection current limit of 2 mA is met. Keep the negative DC voltage greater than
-0.6 V on eTPU[15] and on SINB during the internal power-on reset (POR) state.”
Table 4 (EMI Testing Specifications) EMI Testing Specifications: Changed the maximum operating frequency to from 132 to fMAX.
Table 5 (ESD Ratings ,) ESD Characteristics: Added (Electromagnetic Static Discharge) in the section title.
Table 6 (VRC and POR Electrical Specifications), VCR/POR Electrical Specifications:
Subscript all symbol names that appear after the first underscore character.
Removed ‘Tj ‘a(chǎn)fter ‘150 C’ in the last line, second column: Characteristic.
Reformatted columns.
Added footnote 1 to specs 1, 2, and 3 that reads: On power up, assert RESET before VPOR15, VPOR33, and VPOR5
negate (internal POR). RESET must remain asserted until the power supplies are within the operating conditions
as specified in Table 9 (DC Electrical Specifications (TA = TL to TH)) DC Electrical Specifications. On power down,
assert RESET before any power supplies fall outside the operating conditions and until the internal POR asserts.
Added to Spec 2:
3.3 V (VDDSYN) POR negated (ramp down)
Min. 0.0
Max 0.30
V
3.3 V (VDDSYN) POR asserted (ramp up)
Min. 0.0
Max 0.30
V
Specs 7 and 10: added ‘a(chǎn)t Tj ‘a(chǎn)t the end of the first line in the second column: Characteristic.
Spec 10:
Changed the minimum values of: -40 C = 40; 25 C = 45; 150 C = 55.
Added cross-reference to footnote 6: ‘IVRCCTL is measured at the following conditions: VDD = 1.35 V,
VRC33 = 3.1 V, VVRCCTL = 2.2 V.’ Changed ‘(@ VDD = 1.35 V, fsys = fMAX)‘to ‘(@ fsys = fMAX).
Added a new footnote 7, ‘Refer to Table 1 (Orderable Part Numbers) for the maximum operating frequency.’
Rewrote old footnote 8 (new footnote 9) to read: Represents the worst-case external transistor BETA. It is
measured on a per-part basis and calculated as (IDD IVRCCTL).
Deleted old footnote 9: ‘Preliminary value. Final specification pending characterization.’
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