參數(shù)資料
型號: MSM56V16400D-12TS-K
廠商: OKI SEMICONDUCTOR CO., LTD.
英文描述: 2-Bank X 2,097,152-Word X 4-Bit SYNCHRONOUS DYNAMIC RAM
中文描述: 2,銀行甲2097152字× 4位同步動態(tài)隨機存儲器
文件頁數(shù): 12/30頁
文件大?。?/td> 324K
代理商: MSM56V16400D-12TS-K
Semiconductor
MSM56V16400D/DH
12/30
*
Notes:
1. When
CS
is set "High" at a clock transition from "Low" to "High", all inputs except CKE and DQM are
invalid.
2. When issuing an active, read or write command, the bank is selected by A11.
3. The auto precharge function is enabled or disabled by the A10 input when the read or write command
is issued.
A11
0
1
Active, read or write
Bank A
Bank B
A10
0
1
Operation
After the end of burst, bank A holds the idle status.
After the end of burst, bank A is precharged automatically.
A11
0
0
1
1
0
1
After the end of burst, bank B holds the idle status.
After the end of burst, bank B is precharged automatically.
4. When issuing a precharge command, the bank to be precharged is selected by the A10 and A11
inputs.
A10
0
0
1
A11
0
1
X
Operation
Bank A is precharged.
Bank B is precharged.
Both banks A and B are precharged.
5. The input data and the write command are latched by the same clock (Write latency = 0).
6. The output is forced to high impedance by (1 CLK + t
OHZ
) after DQM entry.
相關(guān)PDF資料
PDF描述
MSM56V16400D 2-Bank X 2,097,152-Word X 4-Bit SYNCHRONOUS DYNAMIC RAM
MSM56V16400D-10TS-K 2-Bank X 2,097,152-Word X 4-Bit SYNCHRONOUS DYNAMIC RAM
MSM56V16400DH-15TS-K 2-Bank X 2,097,152-Word X 4-Bit SYNCHRONOUS DYNAMIC RAM
MSM56V16800D 2-Bank×1,048,576-Word×8-Bit Synchronous Dynamic RAM(2組×1,048,576字×8位同步動態(tài)RAM)
MSM56V16800DH 2-Bank×1,048,576-Word×8-Bit Synchronous Dynamic RAM(2組×1,048,576字×8位同步動態(tài)RAM)
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