參數(shù)資料
型號(hào): MSM56V16400D-12TS-K
廠商: OKI SEMICONDUCTOR CO., LTD.
英文描述: 2-Bank X 2,097,152-Word X 4-Bit SYNCHRONOUS DYNAMIC RAM
中文描述: 2,銀行甲2097152字× 4位同步動(dòng)態(tài)隨機(jī)存儲(chǔ)器
文件頁(yè)數(shù): 3/30頁(yè)
文件大?。?/td> 324K
代理商: MSM56V16400D-12TS-K
Semiconductor
MSM56V16400D/DH
3/30
PIN DESCRIPTION
CLK
CS
Fetches all inputs at the "H" edge.
Disables or enables device operation by asserting or deactivating all inputs except CLK, CKE and DQM.
CKE
Masks system clock to deactivate the subsequent CLK operation.
If CKE is deactivated, system clock will be masked so that the subsequent CLK operation is
deactivated. CKE should be asserted at least one cycle prior to a new command.
Row & column multiplexed.
Row address: RA0 – RA10
Column address: CA0 – CA9
Selects bank to be activated during row address latch time and selects bank for precharge and read/
write during column address latch time. A11 = "L" : Bank A, A11 = "H" : Bank B
RAS
CAS
WE
DQM
Functionality depends on the combination. For details, see the function truth table.
Masks the read data of two clocks later when DQM is set "H" at the "H" edge of the clock signal.
Masks the write data of the same clock when DQM is set "H" at the "H" edge of the clock signal.
Data inputs/outputs are multiplexed on the same pin.
Address
DQi
A11
相關(guān)PDF資料
PDF描述
MSM56V16400D 2-Bank X 2,097,152-Word X 4-Bit SYNCHRONOUS DYNAMIC RAM
MSM56V16400D-10TS-K 2-Bank X 2,097,152-Word X 4-Bit SYNCHRONOUS DYNAMIC RAM
MSM56V16400DH-15TS-K 2-Bank X 2,097,152-Word X 4-Bit SYNCHRONOUS DYNAMIC RAM
MSM56V16800D 2-Bank×1,048,576-Word×8-Bit Synchronous Dynamic RAM(2組×1,048,576字×8位同步動(dòng)態(tài)RAM)
MSM56V16800DH 2-Bank×1,048,576-Word×8-Bit Synchronous Dynamic RAM(2組×1,048,576字×8位同步動(dòng)態(tài)RAM)
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