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參數(shù)資料
| 型號： | MSM56V16400D-12TS-K |
| 廠商： | OKI SEMICONDUCTOR CO., LTD. |
| 英文描述： | 2-Bank X 2,097,152-Word X 4-Bit SYNCHRONOUS DYNAMIC RAM |
| 中文描述： | 2，銀行甲2097152字× 4位同步動態(tài)隨機存儲器 |
| 文件頁數(shù)： | 6/30頁 |
| 文件大?。?/td> | 324K |
| 代理商： | MSM56V16400D-12TS-K |
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Semiconductor
MSM56V16400D/DH
6/30
DC Characteristics
Parameter
Condition
Version
D-12
Unit Note
CKE
Others
Bank
D-10
Min.Max.Min.Max.Min.Max.
DH-15
Symbol
Output High Voltage
Output Low Voltage
Input Leakage Current
Output Leakage Current
2.4
—
–
10
–
10
V
V
m
A
m
A
—
—
—
—
I
OH
= –2 mA
I
OL
= 2 mA
—
—
t
CC
= min
t
RC
= min
No Burst
t
CC
= min
t
RC
= min
t
RRD
= min
No Burst
t
CC
= min
—
—
—
—
V
OH
V
OL
I
LI
I
LO
I
CC
1
—
0.4
10
10 –
10
10 –
10
10
2.4
—
–
10
—
0.4
10
2.4
—
–
10
—
0.4
10
Average Power
Supply Current
(Operating)
—
mA
1, 2
CKE
≥
V
IH
One Bank
Active
70
—
60
—
55
—
mA
1, 2
CKE
≥
V
IH
Both Banks
Active
I
CC
1D
100
—
85
—
80
Power Supply
Current (Stand by)
Average Power
Supply Current
(Clock Suspension)
—
mA
3
CKE
≥
V
IH
Both Banks
Precharge
Both Banks
Active
I
CC
2
30
—
25
—
20
—
mA
2
CKE
￡
V
IL
t
CC
= min
I
CC
3S
3
—
3
—
3
Power Supply
Current (Burst)
Power Supply
Current
(Auto-Refresh)
Average Power
Supply Current
(Self-Refresh)
—
mA
1, 2
CKE
≥
V
IH
t
CC
= min
Both Banks
Active
One Bank
Active
I
CC
4
90
—
75
—
60
—
mA
2
CKE
≥
V
IH
t
CC
= min
t
RC
= min
I
CC
5
70
—
60
—
50
—
mA
CKE
￡
V
IL
t
CC
= min
Both Banks
Precharge
I
CC
6
2
—
2
—
2
Average Power
Supply Current
(Power down)
—
mA
CKE
￡
V
IL
t
CC
= min
Both Banks
Precharge
I
CC
7
2
—
2
—
2
Average Power
Supply Current
(Active Stand by)
—
mA
3
CKE
≥
V
IH
t
CC
= min
One Bank
Active
I
CC
3
35
—
30
—
25
Notes:
1. Measured with outputs open.
2. The address and data can be changed once or left unchanged during one cycle.
3. The address and data can be changed once or left unchanged during two cycles.
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| MSM56V16400D | 2-Bank X 2,097,152-Word X 4-Bit SYNCHRONOUS DYNAMIC RAM |
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