參數(shù)資料
型號(hào): MSM56V16400D-12TS-K
廠商: OKI SEMICONDUCTOR CO., LTD.
英文描述: 2-Bank X 2,097,152-Word X 4-Bit SYNCHRONOUS DYNAMIC RAM
中文描述: 2,銀行甲2097152字× 4位同步動(dòng)態(tài)隨機(jī)存儲(chǔ)器
文件頁(yè)數(shù): 2/30頁(yè)
文件大?。?/td> 324K
代理商: MSM56V16400D-12TS-K
Semiconductor
MSM56V16400D/DH
2/30
PIN CONFIGURATION (TOP VIEW)
V
CC
1
NC
2
V
SS
Q
3
DQ1
4
V
CC
Q
5
NC
6
V
SS
Q
7
DQ2
8
V
CC
Q
9
NC
10
NC
11
WE
12
CAS
13
RAS
14
CS
15
A11
16
A10
17
A0
18
A1
19
A2
20
A3
21
V
CC
22
V
SS
NC
V
SS
Q
DQ4
V
CC
Q
NC
V
SS
Q
DQ3
V
CC
Q
NC
NC
DQM
CLK
CKE
NC
A9
A8
A7
A6
A5
A4
V
SS
44-Pin Plastic TSOP (
II
)
(K Type)
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
Pin Name
CLK
CS
Function
System Clock
Chip Select
Clock Enable
Address
Bank Select Address
Row Address Strobe
Column Address Strobe
Write Enable
Data Input/Output Mask
Data Input/Output
Power Supply (3.3 V)
Ground (0 V)
Data Output Power Supply (3.3 V)
Data Output Ground (0 V)
No Connection
CKE
A0 - A10
A11
RAS
CAS
WE
DQM
DQi
V
CC
V
SS
V
CC
Q
V
SS
Q
NC
Pin Name
Function
Note:
The same power supply voltage must be provided to every V
CC
pin and V
CC
Q pin.
The same GND voltage level must be provided to every V
SS
pin and V
SS
Q pin.
相關(guān)PDF資料
PDF描述
MSM56V16400D 2-Bank X 2,097,152-Word X 4-Bit SYNCHRONOUS DYNAMIC RAM
MSM56V16400D-10TS-K 2-Bank X 2,097,152-Word X 4-Bit SYNCHRONOUS DYNAMIC RAM
MSM56V16400DH-15TS-K 2-Bank X 2,097,152-Word X 4-Bit SYNCHRONOUS DYNAMIC RAM
MSM56V16800D 2-Bank×1,048,576-Word×8-Bit Synchronous Dynamic RAM(2組×1,048,576字×8位同步動(dòng)態(tài)RAM)
MSM56V16800DH 2-Bank×1,048,576-Word×8-Bit Synchronous Dynamic RAM(2組×1,048,576字×8位同步動(dòng)態(tài)RAM)
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