參數(shù)資料
型號(hào): MSM56V16400D-12TS-K
廠商: OKI SEMICONDUCTOR CO., LTD.
英文描述: 2-Bank X 2,097,152-Word X 4-Bit SYNCHRONOUS DYNAMIC RAM
中文描述: 2,銀行甲2097152字× 4位同步動(dòng)態(tài)隨機(jī)存儲(chǔ)器
文件頁數(shù): 21/30頁
文件大小: 324K
代理商: MSM56V16400D-12TS-K
Semiconductor
MSM56V16400D/DH
21/30
Clock Suspension & DQM Operation Cycle
@
CAS
Latency = 2, Burst Length = 4
*Notes:
1. When Clock Suspension is asserted, the next clock cycle is ignored.
2. When DQM is asserted, the read data after two clock cycles is masked.
3. When DQM is asserted, the write data in the same clock cycle is masked.
CLOCK
Suspension
CLK
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
CKE
RAS
CAS
ADDR
DQ1 - 4
WE
Ra
CS
Ca
Cb
A11
A10
Row Active
Qb1
Qb0
Read
Command
Read
Command
Read DQM
Write
Command
CLOCK
Suspension
Write
DQM
Read DQM
Cc
t
OHZ
Dc2
Dc0
Qa1
Qa0
Qa2
t
OHZ
Write
DQM
*Note1
¨
*Note1
DQM
*Note3
¨
*Note2
Ra
相關(guān)PDF資料
PDF描述
MSM56V16400D 2-Bank X 2,097,152-Word X 4-Bit SYNCHRONOUS DYNAMIC RAM
MSM56V16400D-10TS-K 2-Bank X 2,097,152-Word X 4-Bit SYNCHRONOUS DYNAMIC RAM
MSM56V16400DH-15TS-K 2-Bank X 2,097,152-Word X 4-Bit SYNCHRONOUS DYNAMIC RAM
MSM56V16800D 2-Bank×1,048,576-Word×8-Bit Synchronous Dynamic RAM(2組×1,048,576字×8位同步動(dòng)態(tài)RAM)
MSM56V16800DH 2-Bank×1,048,576-Word×8-Bit Synchronous Dynamic RAM(2組×1,048,576字×8位同步動(dòng)態(tài)RAM)
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