參數資料
型號: MSM56V16400D-12TS-K
廠商: OKI SEMICONDUCTOR CO., LTD.
英文描述: 2-Bank X 2,097,152-Word X 4-Bit SYNCHRONOUS DYNAMIC RAM
中文描述: 2,銀行甲2097152字× 4位同步動態(tài)隨機存儲器
文件頁數: 7/30頁
文件大?。?/td> 324K
代理商: MSM56V16400D-12TS-K
Semiconductor
MSM56V16400D/DH
7/30
Mode Set Address Keys
CAS
Latency
A6
0
0
0
0
1
1
1
1
A5
0
0
1
1
0
0
1
1
A4
0
1
0
1
0
1
0
1
CL
A3
0
1
BT
A2
0
0
0
0
1
1
1
1
*
2
: Not applicable to H version.
A1
0
0
1
1
0
0
1
1
A0
0
1
0
1
0
1
0
1
BT = 0
1
2
4
8
Reserved
Reserved
Reserved
Full Page
*
2
Reserved
BT = 1
1
2
4
8
Reserved
Reserved
Reserved
Burst Type
Burst Length
Reserved
1
*
2
2
3
Reserved
Reserved
Reserved
Reserved
Sequential
Interleave
Note:
A7, A8, A9, A10 and A11 should stay "L" during mode set cycle.
POWER ON SEQUENCE
1. With inputs in NOP state, turn on the power supply and start the system clock.
2. After the V
CC
voltage has reached the specified level, pause for 200
m
s or more with
the input kept in NOP state.
3. Issue the precharge all bank command.
4. Apply a CBR auto-refresh eight or more times.
5. Enter the mode register setting command.
相關PDF資料
PDF描述
MSM56V16400D 2-Bank X 2,097,152-Word X 4-Bit SYNCHRONOUS DYNAMIC RAM
MSM56V16400D-10TS-K 2-Bank X 2,097,152-Word X 4-Bit SYNCHRONOUS DYNAMIC RAM
MSM56V16400DH-15TS-K 2-Bank X 2,097,152-Word X 4-Bit SYNCHRONOUS DYNAMIC RAM
MSM56V16800D 2-Bank×1,048,576-Word×8-Bit Synchronous Dynamic RAM(2組×1,048,576字×8位同步動態(tài)RAM)
MSM56V16800DH 2-Bank×1,048,576-Word×8-Bit Synchronous Dynamic RAM(2組×1,048,576字×8位同步動態(tài)RAM)
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