參數(shù)資料
型號(hào): MT58L512L18PS-7.5IT
元件分類(lèi): SRAM
英文描述: 512K X 18 CACHE SRAM, 4 ns, PQFP100
封裝: PLASTIC, MS-026BHA, TQFP-100
文件頁(yè)數(shù): 14/32頁(yè)
文件大小: 616K
代理商: MT58L512L18PS-7.5IT
21
8Mb: 512K x 18, 256K x 32/36 Pipelined, SCD SyncBurst SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT58L512L18P_2.p65 – Rev. 6/01
2001, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
PIPELINED, SCD SYNCBURST SRAM
TQFP THERMAL RESISTANCE
DESCRIPTION
CONDITIONS
SYMBOL
TYP
UNITS NOTES
Thermal Resistance
Test conditions follow standard test
1-layer
θ
JA
40
°C/W
1
(Junction to Ambient)
methods and procedures for measuring
Thermal Resistance
thermal impedance, per EIA/JESD51.
θ
JC
8
°C/W
1
(Junction to Top of Case)
FBGA THERMAL RESISTANCE
DESCRIPTION
CONDITIONS
SYMBOL
TYP
UNITS NOTES
Junction to Ambient
Test conditions follow standard test methods
θ
JA
40
°C/W
1, 2
(Airflow of 1m/s)
and procedures for measuring thermal
Junction to Case (Top)
impedance, per EIA/JESD51.
θ
JC
9
°C/W
1, 2
Junction to Pins
θ
JB
17
°C/W
1, 2
(Bottom)
NOTE: 1. This parameter is sampled.
2. Preliminary package data.
BGA THERMAL RESISTANCE
DESCRIPTION
CONDITIONS
SYMBOL
TYP
UNITS NOTES
Junction to Ambient
Test conditions follow standard test methods
θ
JA
40
°C/W
1
(Airflow of 1m/s)
and procedures for measuring thermal
Junction to Case (Top)
impedance, per EIA/JESD51.
θ
JC
9
°C/W
1
Junction to Bumps
θ
JB
17
°C/W
1
(Bottom)
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