參數(shù)資料
型號： MT58L512L18PS-7.5IT
元件分類： SRAM
英文描述： 512K X 18 CACHE SRAM, 4 ns, PQFP100
封裝： PLASTIC, MS-026BHA, TQFP-100
文件頁數(shù)： 16/32頁
文件大?。?/td> 616K
代理商： MT58L512L18PS-7.5IT
23
8Mb: 512K x 18, 256K x 32/36 Pipelined, SCD SyncBurst SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT58L512L18P_2.p65 – Rev. 6/01
2001, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
PIPELINED, SCD SYNCBURST SRAM
NOTE: 1. Test conditions as specified with the output loading shown in Figure 1 for 3.3V I/O (VDDQ = +3.3V +0.3V/-0.165V) and
Figure 3 for 2.5V I/O (VDDQ = +2.5V +0.4V/-0.125V) unless otherwise noted.
2. Measured as HIGH above VIH and LOW below VIL.
3. This parameter is measured with output load as shown in Figure 2 for 3.3V I/O and Figure 4 for 2.5V I/O.
4. This parameter is sampled.
5. Transition is measured ±500mV from steady state voltage.
6. Refer to Technical Note TN-58-09, “Synchronous SRAM Bus Contention Design Considerations,” for a more thorough
discussion on these parameters.
7. OE# is a “Don’t Care” when a byte write enable is sampled LOW.
8. A WRITE cycle is defined by at least one byte write enable LOW and ADSP# HIGH for the required setup and hold
times. A READ cycle is defined by all byte write enables HIGH and ADSC# or ADV# LOW or ADSP# LOW for the required
setup and hold times.
9. This is a synchronous device. All addresses must meet the specified setup and hold times for all rising edges of CLK
when either ADSP# or ADSC# is LOW and chip enabled. All other synchronous inputs must meet the setup and hold
times with stable logic levels for all rising edges of clock (CLK) when the chip is enabled. Chip enable must be valid at
each rising edge of CLK when either ADSP# or ADSC# is LOW to remain enabled.
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
(Note 1)(0°C
≤ T
A ≤ +70°C; VDD = +3.3V +0.3V/-0.165V)
-5
-6
-7.5
-10
DESCRIPTION
SYMBOL
MIN
MAX
MIN
MAX
MIN
MAX
MIN
MAX UNITS
NOTES
Clock
Clock cycle time
tKC
5.0
6.0
7.5
10
ns
Clock frequency
fKF
200
166
133
100
MHz
Clock HIGH time
tKH
2.0
2.3
2.5
3.0
ns
2
Clock LOW time
tKL
2.0
2.3
2.5
3.0
ns
2
Output Times
Clock to output valid
tKQ
3.1
3.5
4.0
5.0
ns
Clock to output invalid
tKQX
1.0
1.5
ns
3
Clock to output in Low-Z
tKQLZ
0
1.5
ns
3, 4, 5, 6
Clock to output in High-Z
tKQHZ
3.1
3.5
4.2
5.0
ns
3, 4, 5, 6
OE# to output valid
tOEQ
3.1
3.5
4.2
5.0
ns
7
OE# to output in Low-Z
tOELZ
0
ns
3, 4, 5, 6
OE# to output in High-Z
tOEHZ
3.0
3.5
4.2
4.5
ns
3, 4, 5, 6
Setup Times
Address
tAS
1.5
2.0
ns
8, 9
Address status (ADSC#, ADSP#)
tADSS
1.5
2.0
ns
8, 9
Address advance (ADV#)
tAAS
1.5
2.0
ns
8, 9
Write signals
tWS
1.5
2.0
ns
8, 9
(BWa#-BWd#, BWE#, GW#)
Data-in
tDS
1.5
2.0
ns
8, 9
Chip enables (CE#, CE2#, CE2)
tCES
1.5
2.0
ns
8, 9
Hold Times
Address
tAH
0.5
ns
8, 9
Address status (ADSC#, ADSP#)
tADSH
0.5
ns
8, 9
Address advance (ADV#)
tAAH
0.5
ns
8, 9
Write signals
tWH
0.5
ns
8, 9
(BWa#-BWd#, BWE#, GW#)
Data-in
tDH
0.5
ns
8, 9
Chip enables (CE#, CE2#, CE2)
tCEH
0.5
.5
0.5
ns
8, 9
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相關代理商/技術參數(shù)
參數(shù)描述
MT58L512L18PT-10 制造商:Cypress Semiconductor 功能描述:512KX18 SRAM PLASTIC TQFP 3.3V 制造商:Rochester Electronics LLC 功能描述:- Bulk
MT58L512L18PT-7.5 制造商:Rochester Electronics LLC 功能描述:- Bulk
MT58L512L18PT-7.5 IT 制造商:Cypress Semiconductor 功能描述:512KX18 SRAM PLASTIC IND TEMP
MT58L512V18F 制造商:MICRON 制造商全稱:Micron Technology 功能描述:8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH SYNCBURST SRAM
MT58L512V18P 制造商:MICRON 制造商全稱:Micron Technology 功能描述:8Mb: 512K x 18, 256K x 32/36 PIPELINED, SCD SYNCBURST SRAM
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