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參數(shù)資料
| 型號： | MT58L512L18PS-7.5IT |
| 元件分類： | SRAM |
| 英文描述： | 512K X 18 CACHE SRAM, 4 ns, PQFP100 |
| 封裝： | PLASTIC, MS-026BHA, TQFP-100 |
| 文件頁數(shù)： | 3/32頁 |
| 文件大小： | 616K |
| 代理商： | MT58L512L18PS-7.5IT |
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8Mb: 512K x 18, 256K x 32/36 Pipelined, SCD SyncBurst SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT58L512L18P_2.p65 – Rev. 6/01
2001, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
PIPELINED, SCD SYNCBURST SRAM
FBGA PIN DESCRIPTIONS (continued)
x18
x32/x36
SYMBOL
TYPE
DESCRIPTION
9A
ADV#
Input
Synchronous Address Advance: This active LOW input is used to
advance the internal burst counter, controlling burst access after
the external address is loaded. A HIGH on ADV# effectively causes
wait states to be generated (no address advance). To ensure use of
correct address during a WRITE cycle, ADV# must be HIGH at the
rising edge of the first clock after an ADSP# cycle is initiated.
9B
ADSP#
Input
Synchronous Address Status Processor: This active LOW input
interrupts any ongoing burst, causing a new external address to be
registered. A READ is performed using the new address,
independent of the byte write enables and ADSC#, but dependent
upon CE#, CE2 and CE2#. ADSP# is ignored if CE# is HIGH. Power-
down state is entered if CE2 is LOW or CE2# is HIGH.
8A
ADSC#
Input
Synchronous Address Status Controller: This active LOW input
interrupts any ongoing burst, causing a new external address to be
registered. A READ or WRITE is performed using the new address if
CE# is LOW. ADSC# is also used to place the chip into power-down
state when CE# is HIGH.
1R
MODE
Input
Mode: This input selects the burst sequence. A LOW on this input
(LB0#)
selects “l(fā)inear burst.” NC or HIGH on this input selects “interleaved
burst.” Do not alter input state while device is operating.
(a) 10J, 10K,
DQa
Input/ SRAM Data I/Os: For the x18 version, Byte “a” is associated DQa’s;
10L, 10M, 11D, 10L, 10M, 11J,
Output Byte “b” is associated with DQb’s. For the x32 and x36 versions,
11E, 11F, 11G 11K, 11L, 11M
Byte “a” is associated with DQa’s; Byte “b” is associated with DQb's;
(b) 1J, 1K,
(b) 10D, 10E,
DQb
Byte “c” is associated with DQc’s; Byte “d” is associated with DQd’s.
1L, 1M, 2D,
10F, 10G, 11D,
Input data must meet setup and hold times around the rising edge
2E, 2F, 2G
11E, 11F, 11G
of CLK.
(c) 1D, 1E,
DQc
1F, 1G, 2D,
2E, 2F, 2G
(d) 1J, 1K, 1L,
DQd
1M, 2J, 2K,
2L, 2M
11C
11N
NF/DQPa
NF/
No Function/Parity Data I/Os: On the x32 version, these are No
1N
11C
NF/DQPb
I/O
Function (NF). On the x18 version, Byte “a” parity is DQPa; Byte “b”
–
1C
NF/DQPc
parity is DQPb. On the x36 version, Byte “a” parity is DQPa; Byte
–
1N
NF/DQPd
“b” parity is DQPb; Byte “c” parity is DQPc; Byte “d” parity is DQPd.
1H, 4D, 4E, 4F, 1H, 4D, 4E, 4F,
VDD
Supply Power Supply: See DC Electrical Characteristics and Operating
4G, 4H, 4J,
Conditions for range.
4K, 4L, 4M,
8D, 8E, 8F,
8G, 8H, 8J,
8K, 8L, 8M
(continued on next page)
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相關(guān)代理商/技術(shù)參數(shù) |
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| MT58L512L18PT-10 | 制造商:Cypress Semiconductor 功能描述:512KX18 SRAM PLASTIC TQFP 3.3V 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MT58L512L18PT-7.5 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MT58L512L18PT-7.5 IT | 制造商:Cypress Semiconductor 功能描述:512KX18 SRAM PLASTIC IND TEMP |
| MT58L512V18F | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH SYNCBURST SRAM |
| MT58L512V18P | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:8Mb: 512K x 18, 256K x 32/36 PIPELINED, SCD SYNCBURST SRAM |
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