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參數(shù)資料
| 型號： | NAND01GR3B2CN6F |
| 廠商： | NUMONYX |
| 元件分類： | PROM |
| 英文描述： | 128M X 8 FLASH 1.8V PROM, 25000 ns, PDSO48 |
| 封裝： | 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48 |
| 文件頁數(shù)： | 11/65頁 |
| 文件大?。?/td> | 1473K |
| 代理商： | NAND01GR3B2CN6F |
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NAND01G-B2C
Command set
19/65
5
Command set
All bus write operations to the device are interpreted by the command interface. The
commands are input on I/O0-I/O7 and are latched on the rising edge of Write Enable when
the Command Latch Enable signal is High. Device operations are selected by writing
specific commands to the command register. The two-step command sequences for
program and erase operations are imposed to maximize data security.
The commands are summarized in Table 10: Commands.
Table 10.
Commands
Command
Bus write operations(1)
1. The bus cycles are only shown for issuing the codes. The cycles required to input the
addresses or input/output data are not shown.
Commands
accepted
during
busy
1st cycle
2nd cycle
3rd cycle
4th cycle
Read
00h
30h
–
Random Data Output
05h
E0h
–
Cache Read
00h
31h
–
Exit Cache Read
3Fh
–
Page Program
(sequential input default)
80h
10h
–
Random Data Input
85h
–
Copy Back Program
00h
35h
85h
10h
Block Erase
60h
D0h
–
Reset
FFh
–
Yes
Read Electronic Signature
90h
–
Read Status Register
70h
–
Yes
Read ONFI Parameter Page
ECh
–
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相關(guān)代理商/技術(shù)參數(shù) |
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| NAND01GR3B2CWFD | 制造商:Micron Technology Inc 功能描述:NAND - Gel-pak, waffle pack, wafer, diced wafer on film |
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| NAND01GR3B2CZA1E | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory |
| NAND01GR3B2CZA1F | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory |
| NAND01GR3B2CZA6 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory |
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