- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄268181 > NAND01GR3B2CN6F (NUMONYX) 128M X 8 FLASH 1.8V PROM, 25000 ns, PDSO48 PDF資料下載
參數(shù)資料
| 型號(hào)： | NAND01GR3B2CN6F |
| 廠商： | NUMONYX |
| 元件分類： | PROM |
| 英文描述： | 128M X 8 FLASH 1.8V PROM, 25000 ns, PDSO48 |
| 封裝： | 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48 |
| 文件頁數(shù)： | 35/65頁 |
| 文件大小： | 1473K |
| 代理商： | NAND01GR3B2CN6F |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁當(dāng)前第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁
Software algorithms
NAND01G-B2C
8
Software algorithms
This section gives information on the software algorithms that Numonyx recommends to
implement to manage the bad blocks and extend the lifetime of the NAND device.
NAND flash memories are programmed and erased by Fowler-Nordheim tunneling using a
high voltage. Exposing the device to a high voltage for extended periods can cause the
oxide layer to be damaged. For this reason, the number of program and erase cycles is
limited (see Table 18 for value) and it is mandatory to implement error correction code
algorithms to extend the number of program and erase cycles and increase data retention.
To help integrate a NAND memory into an application, Numonyx can provide a full range of
software solutions: file system, sector manager, drivers and code management.
Contact the nearest Numonyx sales office or visit www.numonyx.com for more details.
8.1
Bad block management
Devices with bad blocks have the same quality level and the same AC and DC
characteristics as devices where all the blocks are valid. A bad block does not affect the
performance of valid blocks because it is isolated from the bit line and common source line
by a select transistor.
The devices are supplied with all the locations inside valid blocks erased (FFh). The bad
block information is written prior to shipping. Any block, where the 1st and 6th bytes, or 1st
word, in the spare area of the 1st page, does not contain FFh, is a bad block.
The bad block Information must be read before any erase is attempted as the bad block
information may be erased. For the system to be able to recognize the bad blocks based on
the original information it is recommended to create a bad block table following the flowchart
shown in Figure 17.
8.2
NAND flash memory failure modes
Over the lifetime of the device additional bad blocks may develop.
To implement a highly reliable system, all the possible failure modes must be considered:
●
Program/erase failure: in this case the block has to be replaced by copying the data to
a valid block. These additional bad blocks can be identified as attempts to program or
erase them will give errors in the status register
As the failure of a page program operation does not affect the data in other pages in the
same block, the block can be replaced by re-programming the current data and copying
the rest of the replaced block to an available valid block. The Copy Back Program
command can be used to copy the data to a valid block. See Section 6.4: Copy back
program for more details
●
Read failure: in this case, ECC correction must be implemented. To efficiently use the
memory space, it is recommended to recover single-bit error in read by ECC, without
replacing the whole block.
Refer to Table 17 for the procedure to follow if an error occurs during an operation.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NAND01GR3B3BV1T | 128M X 8 FLASH 1.8V PROM, 35 ns, PDSO48 |
| NAND01GR3B3CV6 | 128M X 8 FLASH 1.8V PROM, 35 ns, PDSO48 |
| NAND01GW3B2AN6F | 128M X 8 FLASH 3V PROM, 25000 ns, PDSO48 |
| NAND08GW3B2CZC1 | 1G X 8 FLASH 3V PROM, 35 ns, PBGA63 |
| NAND01GR3B3CZA1 | 128M X 8 FLASH 1.8V PROM, 35 ns, PBGA63 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NAND01GR3B2CWFD | 制造商:Micron Technology Inc 功能描述:NAND - Gel-pak, waffle pack, wafer, diced wafer on film |
| NAND01GR3B2CZA1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory |
| NAND01GR3B2CZA1E | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory |
| NAND01GR3B2CZA1F | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory |
| NAND01GR3B2CZA6 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。