- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄268181 > NAND01GR3B2CN6F (NUMONYX) 128M X 8 FLASH 1.8V PROM, 25000 ns, PDSO48 PDF資料下載
參數(shù)資料
| 型號(hào)： | NAND01GR3B2CN6F |
| 廠商： | NUMONYX |
| 元件分類： | PROM |
| 英文描述： | 128M X 8 FLASH 1.8V PROM, 25000 ns, PDSO48 |
| 封裝： | 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48 |
| 文件頁(yè)數(shù)： | 19/65頁(yè) |
| 文件大小： | 1473K |
| 代理商： | NAND01GR3B2CN6F |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)當(dāng)前第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)第50頁(yè)第51頁(yè)第52頁(yè)第53頁(yè)第54頁(yè)第55頁(yè)第56頁(yè)第57頁(yè)第58頁(yè)第59頁(yè)第60頁(yè)第61頁(yè)第62頁(yè)第63頁(yè)第64頁(yè)第65頁(yè)
Device operations
NAND01G-B2C
6.3.2
Random data input in a page
During a sequential input operation, the next sequential address to be programmed can be
replaced by a random address, by issuing a Random Data Input command. The following
two steps are required to issue the command:
1.
one bus cycle is required to setup the Random Data Input command (see Table 10)
2.
two bus cycles are then required to input the new column address (refer to Table 6).
Random Data Input can be repeated as often as required in any given page.
Once the program operation has started the status register can be read using the Read
Status Register command. During program operations the status register will only flag errors
for bits set to '1' that have not been successfully programmed to '0'.
During the program operation, only the Read Status Register and Reset commands will be
accepted, all other commands will be ignored.
Once the program operation has completed the P/E/R controller bit SR6 is set to ‘1’ and the
Ready/Busy signal goes High.
The device remains in read status register mode until another valid command is written to
the command interface.
Figure 10.
Page program operation
I/O
RB
Address Inputs
SR0
ai08659
Data Input
10h
70h
80h
Page Program
Setup Code
Confirm
Code
Read Status Register
Busy
tBLBH2
(Program Busy time)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NAND01GR3B3BV1T | 128M X 8 FLASH 1.8V PROM, 35 ns, PDSO48 |
| NAND01GR3B3CV6 | 128M X 8 FLASH 1.8V PROM, 35 ns, PDSO48 |
| NAND01GW3B2AN6F | 128M X 8 FLASH 3V PROM, 25000 ns, PDSO48 |
| NAND08GW3B2CZC1 | 1G X 8 FLASH 3V PROM, 35 ns, PBGA63 |
| NAND01GR3B3CZA1 | 128M X 8 FLASH 1.8V PROM, 35 ns, PBGA63 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NAND01GR3B2CWFD | 制造商:Micron Technology Inc 功能描述:NAND - Gel-pak, waffle pack, wafer, diced wafer on film |
| NAND01GR3B2CZA1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory |
| NAND01GR3B2CZA1E | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory |
| NAND01GR3B2CZA1F | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory |
| NAND01GR3B2CZA6 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。