參數(shù)資料
型號(hào)： NT5SV8M16FT-75BI
廠商： NANYA TECHNOLOGY CORP
元件分類： DRAM
英文描述： 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
封裝： 0.400 MM, PLASTIC, TSSOP2-54
文件頁(yè)數(shù)： 14/65頁(yè)
文件大?。?/td> 739K
代理商： NT5SV8M16FT-75BI
NT5SV8M16FS / NT5SV8M16FT
128Mb Synchronous DRAM
REV 1.4
08/2009
21
NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Precharge Command
The Precharge Command is used to precharge or close a bank that has been activated. The Precharge Command is triggered
when CS, RAS, and WE are low and CAS is high at the rising edge of the clock. The Precharge Command can be used to pre-
charge each bank separately or all banks simultaneously. Three address bits, A10, BA0, and BA1, are used to define which
bank(s) is to be precharged when the command is issued.
For read cycles, the Precharge Command may be applied (CAS latency - 1) prior to the last data output. For write cycles, a
delay must be satisfied from the start of the last burst write cycle until the Precharge Command can be issued. This delay is
known as tDPL, Data-in to Precharge delay.
After the Precharge Command is issued, the precharged bank must be reactivated before a new read or write access can be
executed. The delay between the Precharge Command and the Activate Command must be greater than or equal to the Pre-
charge time (tRP).
Burst Write with Auto-Precharge Interrupted by Read
Bank Selection for Precharge by Address Bits
A10
Bank Select
Precharged Bank(s)
LOW
BA0, BA1
Single bank defined by BA0, BA1
HIGH
DON’T CARE
All Banks
DIN A0
COMMAND
NOP
WRITE A
Auto-Precharge
DIN A1
CK
T0
T2
T1
T3
T4
T5
T6
T7
T8
NOP
*
tCK3, DQs
CAS latency = 3
Bank A can be reactivated at completion of tDAL.
*
READ B
DIN A2
NOP
DOUT B0
DOUT B1
DOUT B2
tDAL
(Burst Length = 4, CAS Latency = 3)
See the Clock Frequency and Latency table.
tDAL is a function of clock cycle time and speed sort.
相關(guān)PDF資料
PDF描述
NT5TU64M16DG-3C 64M X 16 DDR DRAM, 0.45 ns, PBGA84
NTA2425E
NTA2425F
NTA2410-10
NTD2410F
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NT5SV8M16HS-6K 制造商:Nanya Technology Corporation 功能描述:DRAM
NT5SV8M8DT 制造商:未知廠家 制造商全稱:未知廠家 功能描述:64Mb Synchronous DRAM
NT5SV8M8DT-6K 制造商:未知廠家 制造商全稱:未知廠家 功能描述:64Mb Synchronous DRAM
NT5SV8M8DT-7 制造商:未知廠家 制造商全稱:未知廠家 功能描述:64Mb Synchronous DRAM
NT5SV8M8DT-7K 制造商:未知廠家 制造商全稱:未知廠家 功能描述:64Mb Synchronous DRAM
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