參數(shù)資料
型號(hào): NT5SV8M16FT-75BI
廠商: NANYA TECHNOLOGY CORP
元件分類: DRAM
英文描述: 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
封裝: 0.400 MM, PLASTIC, TSSOP2-54
文件頁數(shù): 28/65頁
文件大?。?/td> 739K
代理商: NT5SV8M16FT-75BI
NT5SV8M16FS / NT5SV8M16FT
128Mb Synchronous DRAM
REV 1.4
08/2009
34
NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
Notes
VDD
Power Supply Voltage
-1.0 to +4.6
V
1
VDDQ
Power Supply Voltage for Output
-1.0 to +4.6
V
1
VIN
Input Voltage
-0.3 to VDD+0.3
V
1
VOUT
Output Voltage
-0.3 to VDD+0.3
V
1
TA
Operating Temperature (ambient)
Commerical
0 to +70
°C
1
Industrial
-40 to +85
°C
1
TSTG
Storage Temperature
-55 to +150
°C
1
PD
Power Dissipation
1.0
W
1
IOUT
Short Circuit Output Current
50
mA
1
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This
is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
Recommended DC Operating Conditions
Symbol
Parameter
Rating
Units
Notes
Min.
Typ.
Max.
VDD
Supply Voltage
3.0
3.3
3.6
V
1
VDDQ
Supply Voltage for Output
3.0
3.3
3.6
V
1
VIH
Input High Voltage
2.0
3.0
VDD + 0.3
V
1, 2
VIL
Input Low Voltage
-0.3
0
0.8
V
1, 3
VOH
Output Logic High Voltage
2.4
V
IoH = -2mA
VOL
Output Logic Low Voltage
0.4
V
IoL = 2mA
1. All voltages referenced to VSS and VSSQ.
2. VIH (max) = VDD + 2.3V for pulse width ≤ 3ns.
3. VIL (min) = VSS - 2.0V for pulse width ≤ 3ns.
Capacitance (TA = 23°C, f = 1MHz, VDD = 3.3V, VREF=1.4+/-200mV )
Symbol
Parameter
Min.
64Mb
Max.
128Mb
Max.
Units
CIN
Input Capacitance (A0-A11, BS0, BS1, CS, RAS, CAS, WE, CKE, DQM)
2.5
5.0
3.8
pF
CADD
Address
2.5
5.0
3.8
pF
CCLK
Input Clock (CLK)
2.5
4.0
3.5
pF
COUT
Output Capacitance (DQ0 - DQ15)
4.0
6.5
6.0
pF
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