參數(shù)資料
型號(hào): PF08109B
廠商: Renesas Technology Corp.
英文描述: MOS FET Power Amplifier Module for E-GSM and DCS1800 Dual Band Handy Phone
中文描述: 場效應(yīng)晶體管功率放大器模塊,電子GSM和DCS1800和雙頻手持電話
文件頁數(shù): 4/25頁
文件大?。?/td> 249K
代理商: PF08109B
PF08109B
Rev.3, Feb. 2001, page 2 of 23
Absolute Maximum Ratings
(Tc = 25
°
C)
Item
Symbol
Rating
Unit
Supply voltage
Vdd
8
V
Idd
GSM
Idd
DCS
Vtxlo
3
A
Supply current
2
A
Vtxlo voltage
4
V
Vapc voltage
Vapc
4
V
Input power
Pin
10
30 to +100
30 to +100
dBm
°
C
°
C
Operating case temperature
Tc (op)
Storage temperature
Tstg
Pout GSM
5
W
Output power
Pout DCS
3
W
Note:
The maximum ratings shall be valid over both the E-GSM-band (880 MHz to 915 MHz),
and the DCS1800-band (1710 MHz to 1785 MHz).
Electrical Characteristics for DC
(Tc = 25
°
C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Drain cutoff current
Ids
100
μ
A
Vdd = 8 V, Vapc = 0 V
Vapc control current
Iapc
3
mA
μ
A
Vapc =2.2 V
Vtxlo control current
Itxlo
100
Vtxlo = 2.4 V
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