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參數(shù)資料
| 型號： | PF08109B |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | MOS FET Power Amplifier Module for E-GSM and DCS1800 Dual Band Handy Phone |
| 中文描述： | 場效應(yīng)晶體管功率放大器模塊，電子GSM和DCS1800和雙頻手持電話 |
| 文件頁數(shù)： | 5/25頁 |
| 文件大?。?/td> | 249K |
| 代理商： | PF08109B |
PF08109B
Rev.3, Feb. 2001, page 3 of 23
Electrical Characteristics for E-GSM mode
(Tc = 25
°
C)
Test conditions unless otherwise noted:
f = 880 to 915 MHz, Vdd
GSM
= 3.5 V, Pin
GSM
= 0 dBm, Rg = Rl = 50
, Tc = 25
°
C, Vapc
DCS
= 0.1 V
Pulse operation with pulse width 577
μ
s and duty cycle 1:8 shall be used.
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Frequency range
f
880
915
MHz
Total efficiency (Hi)
η
T(Hi)
41
50
%
2nd harmonic distortion
2nd H.D.
45
38
dBc
3rd harmonic distortion
3rd H.D.
45
40
dBc
Input VSWR
VSWR (in)
1.5
3
Pout
GSM
= 35.5dBm, Vtxlo = 0.1V,
Vapc
GSM
= controlled
Total efficiency (Lo)
η
T(Lo)
27
35
%
Pout
GSM
= 30.8dBm, Vtxlo = 2.4V,
Vapc
GSM
= controlled
Output power (1)(Hi)
Pout (1)(Hi)
35.5
36.0
dBm
Vapc
GSM
= 2.2V, Vtxlo = 0.1V
Output power (1)(Lo)
Pout (1)(Lo)
30.8
31.3
dBm
Vapc
GSM
= 2.2V, Vtxlo = 2.4V
Output power (2)(Hi)
Pout (2)(Hi)
33.5
34.0
dBm
Vdd
GSM
= 3.0V, Vapc
GSM
= 2.2V,
Tc = +85
°
C, Vtxlo = 0.1V
Output power (2)(Lo)
Pout (2)(Lo)
28.8
29.3
dBm
Vdd
GSM
= 3.0V, Vapc
GSM
= 2.2V,
Tc = +85
°
C, Vtxlo = 2.4V
Isolation
42
36
dBm
Vapc
GSM
= 0.2V, Vtxlo = 0.1V
Isolation at DCS RF-output
when GSM is active
23
17
dBm
Pout
GSM
= 35.5dBm, Vtxlo = 0.1V
Measured at f = 1760 to 1830MHz
Switching time
t
r
, t
f
1
2
μ
s
Pout
GSM
= 0 to 35.5dBm,
Vtxlo = 0.1V
Stability
No parasitic oscillation
Vdd
GSM
= 3.0 to 5.1V,
Pout
GSM
≤
35.5dBm, Vtxlo = 0.1, 2.4V,
Vapc
GSM
≤
2.2V, GSMpulse. Rg = 50
,
Output VSWR = 6 : 1 All phases
Load VSWR tolerance
No degradation
Vdd
GSM
= 3.0 to 5.1V, t = 20sec.,
Pout
GSM
≤
35.5dBm, Vtxlo = 0.1, 2.4V,
Vapc
GSM
≤
2.2V, GSM pulse. Rg = 50
,
Output VSWR = 10 : 1 All phases
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