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參數(shù)資料
| 型號： | PF08109B |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | MOS FET Power Amplifier Module for E-GSM and DCS1800 Dual Band Handy Phone |
| 中文描述： | 場效應(yīng)晶體管功率放大器模塊，電子GSM和DCS1800和雙頻手持電話 |
| 文件頁數(shù)： | 6/25頁 |
| 文件大小： | 249K |
| 代理商： | PF08109B |
PF08109B
Rev.3, Feb. 2001, page 4 of 23
Electrical Characteristics for DCS1800 mode
(Tc = 25
°
C)
Test conditions unless otherwise noted:
f = 1710 to 1785 MHz, Vdd
DCS
= 3.5 V, Pin
DCS
= 0 dBm, Rg = Rl = 50
, Tc = 25
°
C, Vapc
GSM
=0.1 V
Pulse operation with pulse width 577
μ
s and duty cycle 1:8 shall be used.
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Frequency range
f
1710
1785
MHz
Total efficiency (Hi)
η
T(Hi)
36
43
%
2nd harmonic distortion
2nd H.D.
45
38
dBc
3rd harmonic distortion
3rd H.D.
45
40
dBc
Input VSWR
VSWR (in)
1.5
3
Pout
DCS
= 32.7dBm,
Vapc
DCS
= controlled
Total efficiency (Lo)
η
T(Lo)
17
25
%
Pout
DCS
= 26.7dBm,
Vapc
DCS
= controlled
Output power (1)
Pout (1)
32.7
33.2
dBm
Vapc
DCS
= 2.2V,
Output power (2)
Pout (2)
30.7
31.2
dBm
Vdd
DCS
= 3.0V, Vapc
DCS
= 2.2V,
Tc = +85
°
C
Isolation
42
36
dBm
Vapc
DCS
= 0.2V
Isolation at GSM RF-output
when DCS is active
10
0
dBm
Pout
DCS
= 32.7dBm,
Measured at f = 1710 to 1785MHz
Switching time
t
r
, t
f
1
2
μ
s
Pout
DCS
= 0 to 32.7dBm
Stability
No parasitic oscillation
Vdd
DCS
= 3.0 to 5.1V,
Pout
DCS
≤
32.7dBm, Vapc
DCS
≤
2.2V,
DCS pulse. Rg = 50
,
Output VSWR = 6 : 1 All phases
Load VSWR tolerance
No degradation
Vdd
DCS
= 3.0 to 5.1V,
Pout
DCS
≤
32.7dBm, t = 20sec.,
Vapc
DCS
≤
2.2V, DCS pulse. Rg = 50
,
Output VSWR = 10 : 1 All phases
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