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參數(shù)資料
| 型號： | PF08127B |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | MOS FET Power Amplifier Module for E-GSM and DCS1800/1900 Triple Band Handy Phone |
| 中文描述： | 場效應(yīng)晶體管功率放大器模塊，電子GSM和DCS1800/1900三頻手持電話 |
| 文件頁數(shù)： | 10/16頁 |
| 文件大?。?/td> | 183K |
| 代理商： | PF08127B |
PF08127B
Rev.0, Oct. 2002, page 8 of 14
GSM mode (880MHz to 915 MHz)
(cont.)
Vdd = 3.5 V
Tc = 25
°
C
Pout:Vapc = 2.2 V
Eff:Pout = 35 dBm
GSM mode (880 MHz) Idd vs. Pout
0.01
0.1
1
10
–50 –40
–20
–30
–10
Pout (dBm)
0
10
20
30
40
I
GSM mode (880 MHz) Pout vs. Pin
33
34
35
36
37
–8
–6
–4
–2
0
2
4
6
8
Pin (dBm)
P
GSM mode (915 MHz) Pout vs. Pin
GSM mode (915 MHz) Idd vs. Pout
700
750
800
850
900
950
1000
Freq (MHz)
GSM mode Pout, Eff vs. Freq
34
33
35
36
37
38
P
30
35
40
60
55
50
45
E
Pout
880 MHz
915 MHz
Vdd = 3.5 V, Tc = 25
°
C
Vdd = 3.5 V, Tc = 85
°
C
Vdd = 3.1 V, Tc = 85
°
C
Eff
Pin = 0 dBm
Vdd = 3.5 V
Vapc = control
Tc = 25
°
C
0.01
0.1
1
10
–50 –40
–20
–30
–10
Pout (dBm)
0
10
20
30
40
I
Pin = 0 dBm
Vdd = 3.5 V
Vapc = control
Tc = 25
°
C
Vdd = 3.5 V
Tc = 25
°
C
Vapc = 2.2 V
33
34
35
36
37
–8
–6
–4
–2
0
2
4
6
8
Pin (dBm)
P
Vdd = 3.5 V, Tc = 25
°
C
Vdd = 3.5 V, Tc = 85
°
C
Vdd = 3.1 V, Tc = 85
°
C
Vapc = 2.2 V
GSM mode Pout vs. Vdd
34
35
36
37
38
39
3
3.2
3.4
3.6
3.8
4
4.2
4.4
Vdd (V)
P
Pout:Vapc = 2.2 V
Eff:Pout = 35 dBm
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