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參數(shù)資料
| 型號： | PF08127B |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | MOS FET Power Amplifier Module for E-GSM and DCS1800/1900 Triple Band Handy Phone |
| 中文描述： | 場效應(yīng)晶體管功率放大器模塊，電子GSM和DCS1800/1900三頻手持電話 |
| 文件頁數(shù)： | 7/16頁 |
| 文件大小： | 183K |
| 代理商： | PF08127B |
PF08127B
Rev.0, Oct. 2002, page 5 of 14
Electrical Characteristics for DCS1900 band
(Tc = 25
°
C)
Test conditions unless otherwise noted:
f = 1850 to 1910 MHz, Vdd1 = Vdd2 = 3.5 V, Pin = 0 dBm, Vctl = 0.2 V, Rg = Rl = 50
, Tc = 25
°
C,
Pulse operation with pulse width 1154
μ
s and duty cycle 2:8 shall be used.
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Frequency range
f
1850
1910
MHz
Band select (DCS active)
Vctl
0
0.1
V
Input power
Pin
–2
0
2
dBm
Control voltage range
Vapc
0.2
2.2
V
Supply voltage
Vdd
3.1
3.5
4.5
V
Total efficiency
η
T
40
47
%
2nd harmonic distortion
2nd H.D.
15(–47)
3(–35)
dBm(dBc)
3rd harmonic distortion
3rd H.D.
8(–40)
3(–35)
dBm(dBc)
4th~8th harmonic distortion
4th~8th H.D.
3(–35)
dBm(dBc)
Input VSWR
VSWR (in)
1.5
3
Pout
DCS
= 32.0 dBm,
Vapc = controlled
Output power (1)
Pout (1)
32.0
33.0
dBm
Vapc = 2.2 V
Output power (2)
Pout (2)
30.5
31.5
dBm
Vdd = 3.1 V, Vapc = 2.2 V,
Tc = +85°C
Idd at Low power
150
mA
Pout
DCS
= 5 dBm
Isolation
42
37
dBm
Vapc = 0.2 V
Switching time
t
r
, t
f
1
2
μ
s
Pout
DCS
= 0 to 32.0 dBm
Stability
No parasitic oscillation
> –36 dBm
Vdd = 3.1 to 4.5 V, Pout
DCS
≤
32.0 dBm,
Vapc
≤
2.2 V, Rg = 50
,
Output VSWR = 6 : 1 All phase angles
Load VSWR tolerance
No degradation
or
Permanent degradation
Vdd = 3.1 to 4.5 V, Pout
DCS
≤
32.0 dBm,
Vapc
≤
2.2 V, Rg = 50
, t
≤
20 sec.,
Output VSWR = 10 : 1 All phase angles
Load VSWR tolerance
at GPRS CLASS 12
operation
No degradation
or
Permanent degradation
Vdd = 3.1 to 4.2 V, Pout
DCS
≤
32.0 dBm,
Vapc
≤
2.2 V,
Rg = 50
, t
≤
20 sec., Tc
≤
90°C,
Output VSWR = 10 : 1 All phase angles
Slope Pout/Vapc
160
200
dB/V
Pout
DCS
= 0 to 32.0 dBm
AM output
15
20
%
Pout
DCS
= 0 to 32.0 dBm,
4% AM modulation at input
50 kHz modulation frequency
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