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參數(shù)資料
| 型號： | PF08127B |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | MOS FET Power Amplifier Module for E-GSM and DCS1800/1900 Triple Band Handy Phone |
| 中文描述： | 場效應晶體管功率放大器模塊，電子GSM和DCS1800/1900三頻手持電話 |
| 文件頁數(shù)： | 2/16頁 |
| 文件大?。?/td> | 183K |
| 代理商： | PF08127B |
Cautions
Keep safety first in your circuit designs!
1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better
and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or
(iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas
Technology Corporation product best suited to the customer's application; they do not convey any
license under any intellectual property rights, or any other rights, belonging to Renesas Technology
Corporation or a third party.
2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any
third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or
circuit application examples contained in these materials.
3. All information contained in these materials, including product data, diagrams, charts, programs and
algorithms represents information on products at the time of publication of these materials, and are
subject to change by Renesas Technology Corporation without notice due to product improvements or
other reasons. It is therefore recommended that customers contact Renesas Technology Corporation
or an authorized Renesas Technology Corporation product distributor for the latest product information
before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss
rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corporation by various
means, including the Renesas Technology Corporation Semiconductor home page
(http://www.renesas.com).
4. When using any or all of the information contained in these materials, including product data, diagrams,
charts, programs, and algorithms, please be sure to evaluate all information as a total system before
making a final decision on the applicability of the information and products. Renesas Technology
Corporation assumes no responsibility for any damage, liability or other loss resulting from the
information contained herein.
5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device
or system that is used under circumstances in which human life is potentially at stake. Please contact
Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor
when considering the use of a product contained herein for any specific purposes, such as apparatus or
systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in
whole or in part these materials.
7. If these products or technologies are subject to the Japanese export control restrictions, they must be
exported under a license from the Japanese government and cannot be imported into a country other
than the approved destination.
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the
country of destination is prohibited.
8. Please contact Renesas Technology Corporation for further details on these materials or the products
contained therein.
相關PDF資料 |
PDF描述 |
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| PF08134B | MOS FET Power Amplifier Module for GSM850 and DCS1800/1900 Triple Band Handy Phone |
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| PF1002 | Nanopower Precision Shunt Voltage Reference; Package: SO; No of Pins: 8; Temperature Range: 0°C to +70°C |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| PF08134B | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:MOS FET Power Amplifier Module for GSM850 and DCS1800/1900 Triple Band Handy Phone |
| PF0830NL | 制造商:Pulse Electronics Corporation 功能描述:- Trays |
| PF083A | 功能描述:繼電器插座與硬件 SOCKET -MK2P RELAY RoHS:否 制造商:TE Connectivity / Schrack 附件類型:Socket 相關繼電器系列:RP, RT, RY 端接類型:PCB 極數(shù):1 |
| PF-083A | 制造商:SONG CHUAN 功能描述:SOCKET PF-083A 制造商:Song Chuan Precision Company 功能描述:SOCKET PF-083A |
| PF083AD | 制造商:OMRON AUTOMATION AND SAFETY 功能描述:SOCKET RELAY 8PIN 10A |
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