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參數(shù)資料
| 型號(hào)： | PF08127B |
| 廠(chǎng)商： | Renesas Technology Corp. |
| 英文描述： | MOS FET Power Amplifier Module for E-GSM and DCS1800/1900 Triple Band Handy Phone |
| 中文描述： | 場(chǎng)效應(yīng)晶體管功率放大器模塊，電子GSM和DCS1800/1900三頻手持電話(huà) |
| 文件頁(yè)數(shù)： | 11/16頁(yè) |
| 文件大小： | 183K |
| 代理商： | PF08127B |
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PF08127B
Rev.0, Oct. 2002, page 9 of 14
DCS mode (1710MHz to 1785 MHz)
DCS mode (1710 MHz) Eff vs. Pout
0
10
20
30
40
50
60
0
5
10
15
20
25
30
35
0
5
10
15
20
25
30
35
Pout (dBm)
Pin = 0 dBm
Vdd = 3.5 V
Vapc = control
Tc = 25
°
C
DCS mode (1785 MHz) Eff vs. Pout
0
10
20
30
40
50
60
Pout (dBm)
E
Pin = 0 dBm
Vdd = 3.5 V
Vapc = control
Tc = 25
°
C
DCS mode (1710 MHz) Pout, Eff vs. Pin
32.0
32.5
33.0
33.5
34.0
34.5
–10 –8 –6 –4 –2
0
2
4
6
8
10
Pin (dBm)
P
35
40
45
50
60
55
Eff
Pout
Vdd = 3.5 V
Tc = 25
°
C
Pout:Vapc = 2.2 V
Eff:Pout = 32.5 dBm
E
DCS mode (1785 MHz) Pout, Eff vs. Pin
E
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2
Vapc (V)
DCS mode (1710 MHz) Pout, Eff vs. Vapc
40
Pin = 0 dBm
Vdd = 3.5 V
Vapc = control
Tc = 25
°
C
–50
–60
–40
–30
–20
–10
0
10
20
30
P
0
10
20
30
40
50
100
90
80
70
60
E
Pout
Eff
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2
Vapc (V)
DCS mode (1785 MHz) Pout, Eff vs. Vapc
40
Pin = 0 dBm
Vdd = 3.5 V
Vapc = control
Tc = 25
°
C
–50
–60
–40
–30
–20
–10
0
10
20
30
P
0
10
20
30
40
50
100
90
80
70
60
E
Eff
Pout
32.0
32.5
33.0
33.5
34.0
34.5
–10 –8 –6 –4 –2
0
2
4
6
8
10
Pin (dBm)
P
35
40
45
50
60
55
Eff
Pout
Vdd = 3.5 V
Tc = 25
°
C
Pout:Vapc = 2.2 V
Eff:Pout = 32.5 dBm
E
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