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參數(shù)資料
| 型號(hào)： | PF08127B |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | MOS FET Power Amplifier Module for E-GSM and DCS1800/1900 Triple Band Handy Phone |
| 中文描述： | 場(chǎng)效應(yīng)晶體管功率放大器模塊，電子GSM和DCS1800/1900三頻手持電話 |
| 文件頁(yè)數(shù)： | 4/16頁(yè) |
| 文件大?。?/td> | 183K |
| 代理商： | PF08127B |
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PF08127B
Rev.0, Oct. 2002, page 2 of 14
Absolute Maximum Ratings *
1
(Tc = 25
°
C)
Item
Symbol
Rating
Unit
Remark
7.0
V
at no-operation
at operation (50
load)
Supply voltage
Vdd
5.0
V
Idd
GSM
Idd
DCS
Vctl
3.5
A
Supply current
2
A
Vctl voltage
4
V
Vapc voltage
Vapc
4
V
Input power
Pin
10
30 to +100
dBm
°
C
Operating case temperature *
2
Tc (op)
Storage temperature
Tstg
40 to +100
°
C
Pout
GSM
Pout
DCS
5
W
Output power
3
W
Notes: 1. The maximum ratings shall be valid over both the E-GSM-band (880 to 915 MHz),
and the DCS1800/1900-band (1710 to 1785 MHz, 1850 to 1910 MHz).
2. These are specified at pulsed operation with pulse width = 1154
μ
sec and duty cycle of 2:8.
Electrical Characteristics for DC
(Tc = 25
°
C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Drain cutoff current
Ids
20
μ
A
Vdd = 4.7 V, Vapc = 0 V,
Vctl = 0.2 V
Vapc control current
Iapc
2.0
mA
μ
A
Vapc = 2.2 V
Vctl control current
Ictl
2
Vctl = 3 V
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