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參數(shù)資料
| 型號： | PF08127B |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | MOS FET Power Amplifier Module for E-GSM and DCS1800/1900 Triple Band Handy Phone |
| 中文描述： | 場效應(yīng)晶體管功率放大器模塊，電子GSM和DCS1800/1900三頻手持電話 |
| 文件頁數(shù)： | 9/16頁 |
| 文件大?。?/td> | 183K |
| 代理商： | PF08127B |
PF08127B
Rev.0, Oct. 2002, page 7 of 14
Characteristic Curves
GSM mode (880MHz to 915 MHz)
GSM mode (880 MHz) Eff vs. Pout
0
10
20
30
40
50
60
0
5
10
15
Pout (dBm)
20
25
30
35
40
Pin = 0 dBm
Vdd = 3.5 V
Vapc = control
Tc = 25
°
C
GSM mode (915 MHz) Eff vs. Pout
0
10
20
30
40
50
60
0
5
10
15
Pout (dBm)
20
25
30
35
40
Pin = 0 dBm
Vdd = 3.5 V
Vapc = control
Tc = 25
°
C
GSM mode (880 MHz) Pout, Eff vs. Pin
34.5
35.0
35.5
36.0
36.5
37.0
–10 –8 –6 –4 –2
0
2
4
6
8
10
Pin (dBm)
P
40
45
50
55
65
60
Eff
Pout
Vdd = 3.5 V
Tc = 25
°
C
Pout:Vapc = 2.2 V
Eff:Pout = 35 dBm
E
40
45
50
55
65
60
E
GSM mode (915 MHz) Pout, Eff vs. Pin
34.5
35.0
35.5
36.0
36.5
37.0
–10 –8 –6 –4 –2
0
2
4
6
8
10
Pin (dBm)
P
Eff
Pout
Vdd = 3.5 V
Tc = 25
°
C
Pout:Vapc = 2.2 V
Eff:Pout = 35 dBm
E
E
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2
Vapc (V)
GSM mode (880 MHz) Pout, Eff vs. Vapc
–50
–60
–40
–30
–20
–10
0
10
20
30
40
P
0
10
20
30
40
50
100
90
80
70
60
E
Pin = 0 dBm
Vdd = 3.5 V
Vapc = control
Tc = 25
°
C
Pout
Eff
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2
Vapc (V)
GSM mode (915 MHz) Pout, Eff vs. Vapc
–50
–60
–40
–30
–20
–10
0
10
20
30
40
P
0
10
20
30
40
50
100
90
80
70
60
E
Pin = 0 dBm
Vdd = 3.5 V
Vapc = control
Tc = 25
°
C
Eff
Pout
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| PF08134B | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:MOS FET Power Amplifier Module for GSM850 and DCS1800/1900 Triple Band Handy Phone |
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