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參數(shù)資料
| 型號： | PF08127B |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | MOS FET Power Amplifier Module for E-GSM and DCS1800/1900 Triple Band Handy Phone |
| 中文描述： | 場效應(yīng)晶體管功率放大器模塊，電子GSM和DCS1800/1900三頻手持電話 |
| 文件頁數(shù)： | 12/16頁 |
| 文件大?。?/td> | 183K |
| 代理商： | PF08127B |
PF08127B
Rev.0, Oct. 2002, page 10 of 14
DCS mode (1710MHz to 1785 MHz)
(cont.)
Pin = 0 dBm
Vapc = 2.2 V
Tc = 25
°
C
DCS mode (1710 MHz) Idd vs. Pout
0.01
0.1
1
10
–50 –40
–20
–30
–10
Pout (dBm)
0
10
20
30
40
I
DCS mode (1710 MHz) Pout vs. Pin
31
32
33
34
35
36
31
32
33
34
35
36
–8
–6
–4
–2
0
2
4
6
8
Pin (dBm)
P
DCS mode (1785 MHz) Pout vs. Pin
DCS mode (1785 MHz) Idd vs. Pout
1600 1650 1700 1750 1800 1850 1900 1950 2000
Freq (MHz)
DCS, PCS mode Pout, Eff vs. Freq
31
30
32
33
34
35
P
35
40
60
55
50
45
E
Pout
1710 MHz
1785 MHz
Vdd = 3.5 V, Tc = 25
°
C
Vdd = 3.5 V, Tc = 85
°
C
Vdd = 3.1 V, Tc = 85
°
C
Eff
Pin = 0 dBm
Vdd = 3.5 V
Vapc = control
Tc = 25
°
C
0.01
0.1
1
10
–50 –40
–20
–30
–10
Pout (dBm)
0
10
20
30
40
I
Pin = 0 dBm
Vdd = 3.5 V
Vapc = control
Tc = 25
°
C
Vdd = 3.5 V
Tc = 25
°
C
Vapc = 2.2 V
–8
–6
–4
–2
0
2
4
6
8
Pin (dBm)
P
Vdd = 3.5 V, Tc = 25
°
C
Vdd = 3.5 V, Tc = 85
°
C
Vdd = 3.1 V, Tc = 85
°
C
Vapc = 2.2 V
DCS mode Pout vs. Vdd
32
33
34
35
36
3
3.2
3.4
3.6
3.8
4
4.2
4.4
Vdd (V)
P
Pout:Vapc = 2.2 V
Eff:Pout = 32.5 dBm
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