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參數(shù)資料
| 型號： | PHP109 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | P-channel enhancement mode MOS transistor(P溝道增強型MOS晶體管) |
| 中文描述： | 5 A, 30 V, 0.09 ohm, P-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SO-8 |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 101K |
| 代理商： | PHP109 |
1997 Jun 18
2
Philips Semiconductors
Product specification
P-channel enhancement mode
MOS transistor
PHP109
FEATURES
High-speed switching
No secondary breakdown
Very low on-resistance.
APPLICATIONS
Motor and actuator driver
Power management
Synchronized rectification.
DESCRIPTION
P-channel enhancement mode MOS transistor in an 8-pin
plastic SO8 (SOT96-1) package.
CAUTION
The device is supplied in an antistatic package.
The gate-source input must be protected against static
discharge during transport or handling.
PINNING - SO8 (SOT96-1)
PIN
SYMBOL
DESCRIPTION
1
2
3
4
5
6
7
8
n.c.
s
s
g
d
d
d
d
not connected
source
source
gate
drain
drain
drain
drain
Fig.1 Simplified outline and symbol.
handbook, halfpage
d
MAM115
1
4
5
d
d
d
s
n.c.
g
s
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
30
1.3
±
20
2.8
5
0.09
4
UNIT
V
DS
V
SD
V
GS
V
GSth
I
D
R
DSon
P
tot
drain-source voltage (DC)
source-drain diode forward voltage
gate-source voltage (DC)
gate-source threshold voltage
drain current (DC)
drain-source on-state resistance
total power dissipation
1
V
V
V
V
A
W
I
S
=
1.25 A
I
D
=
1 mA; V
DS
= V
GS
T
s
= 80
°
C
I
D
=
2.5 A; V
GS
=
10 V
T
s
= 80
°
C
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| PHP109T/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | SO |
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| PHP10N60E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistors Avalanche energy rated |
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