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參數(shù)資料
| 型號： | PHP109 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | P-channel enhancement mode MOS transistor(P溝道增強(qiáng)型MOS晶體管) |
| 中文描述： | 5 A, 30 V, 0.09 ohm, P-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SO-8 |
| 文件頁數(shù)： | 3/12頁 |
| 文件大小： | 101K |
| 代理商： | PHP109 |
1997 Jun 18
3
Philips Semiconductors
Product specification
P-channel enhancement mode
MOS transistor
PHP109
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1.
2.
3.
4.
T
s
is the temperature at the soldering point of the drain lead.
Pulse width and duty cycle limited by maximum junction temperature.
Value based on a printed-circuit board with a R
th a-tp
(ambient to tie-point) of 27.5 K/W.
Value based on a printed-circuit board with a R
th a-tp
(ambient to tie-point) of 90 K/W.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
30
±
20
5
20
4
2.7
1.15
+150
+150
UNIT
V
DS
V
GS
I
D
I
DM
P
tot
drain-source voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
65
65
V
V
A
A
W
W
W
°
C
°
C
T
s
= 80
°
C; note 1
note 2
T
s
= 80
°
C
T
amb
= 25
°
C; note 3
T
amb
= 25
°
C; note 4
T
stg
T
j
storage temperature
operating junction temperature
Source-drain diode
I
S
I
SM
source current (DC)
peak pulsed source current
T
s
= 80
°
C
note 2
3
12
A
A
Fig.2 Power derating curve.
handbook, halfpage
(W)
0
200
0
2
4
6
8
MGD381
50
100
150
Ts (
o
C)
δ
= 0.01; T
S
= 80
°
C.
(1) R
DSon limitation
.
Fig.3 SOAR.
handbook, halfpage
MGD382
1
1
10
ID
(A)
10
10
2
10
1
10
1
2
1 ms
10 ms
100 ms
100
μ
s
DC
(1)
VDS (V)
tp =
10
μ
s
tp
tp
T
T
P
t
δ
=
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