參數(shù)資料
型號: POE-VOICE-RD
廠商: Silicon Laboratories Inc
文件頁數(shù): 81/108頁
文件大?。?/td> 0K
描述: KIT REF DESIGN PWR OVER ETHERNET
標準包裝: 1
主要目的: 參考設計,以太網(wǎng)供電(POE),語音傳輸
嵌入式: 是,MCU,8 位
已用 IC / 零件: C8051F340,CP2201,Si3400
主要屬性: 嵌入式以太網(wǎng),以太網(wǎng)供電,8 kHz 語音采樣系統(tǒng)
次要屬性: 圖形用戶界面
已供物品: 板,線纜,電源,軟件
產(chǎn)品目錄頁面: 626 (CN2011-ZH PDF)
相關產(chǎn)品: 336-1385-ND - IC POWER OVER ETHERNET 20QFN
336-1322-ND - IC POWER OVER ETHERNET 20QFN
336-1313-ND - IC ETH CTRLR SNGL-CHIP 28QFN
336-1298-ND - IC 8051 MCU FLASH 64K 48TQFP
其它名稱: 336-1326
CP2200/1
74
Rev. 1.0
13.2. Reading the Flash Memory
Flash reads occur much faster than Flash write or erase operations and are completed within the minimum read
strobe time specified by the parallel host interface. Flash is read using the FLASHADDRH:FLASHADDRL,
FLASHDATA, and FLASHAUTORD registers. The FLASHAUTORD register provides an efficient method of
accessing sequential data in Flash by automatically incrementing the Flash address pointer after each read.
13.2.1. Flash Read Procedure
Step 1: Set FLASHADDRH:FLASHADDRL to the address of the byte to be read.
Step 2: Read the value of the byte from FLASHDATA.
13.2.2. Multiple Byte Flash Read Procedure
Step 1: Set FLASHADDRH:FLASHADDRL to the address of the first byte to be read.
Step 2: For each byte, read the value from FLASHAUTORD.
Table 18. Flash Electrical Characteristics
VDD = 3.1 to 3.6 V, –40 to +85 °C unless otherwise specified.
Parameters
Conditions
Min
Typ
Max
Units
Flash Size
8192
bytes
Endurance
20k
100k
Erase/
Write
Erase Cycle Time
11
ms
Write Cycle Time
40
55
70
s
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