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參數資料
| 型號： | PTF180101 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz |
| 中文描述： | LDMOS射頻功率場效應晶體管10瓦，1805至1880年兆赫，1930-1990 MHz的10瓦，2110年至二一七〇年兆赫 |
| 文件頁數： | 2/10頁 |
| 文件大小： | 310K |
| 代理商： | PTF180101 |
Data Sheet
2
2004-02-03
PTF180101
RF Characteristics, WCDMA Operation
at T
CASE
= 25°C unless otherwise indicated
WCDMA Measurements
(not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 135 mA, P
OUT
= 1.8 W,
f = 2170 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8.7 dB @ 0.01% CCDF
Characteristic
Adjacent Channel Power Ratio
Gain
Drain Efficiency
Symbol
ACPR
G
ps
η
D
Min
—
—
—
Typ
–45
18
20
Max
—
—
—
Units
dBc
dB
%
Two–Tone Measurements
(not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 135 mA, P
OUT
= 10 W PEP, f = 2170 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency @ –30 dBc IM3
Intermodulation Distortion
Symbol
G
ps
η
D
IMD
Min
—
—
—
Typ
18
37
–30
Max
—
—
—
Units
dB
%
dBc
DC Characteristics
at T
CASE
= 25°C unless otherwise indicated
Characteristic
Drain–Source Breakdown Voltage
Drain Leakage Current
On–State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 μA
V
DS
= 28 V, V
GS
= 0 V
V
GS
= 10 V, V
DS
= 0.1 A
V
DS
= 28 V, I
DQ
= 180 mA
V
GS
= 10 V, V
DS
= 0 V
Symbol
V
(BR)DSS
I
DSS
R
DS(on)
V
GS
I
GSS
Min
65
—
—
2.5
—
Typ
—
—
0.83
3.2
—
Max
—
1.0
—
4.0
1.0
Units
V
μA
V
μA
Maximum Ratings
at T
CASE
= 25°C unless otherwise indicated
Parameter
Symbol
Value
Unit
Drain–Source Voltage
V
DSS
65
V
Gate–Source Voltage
V
GS
–0.5 to +12
V
Junction Temperature
T
J
200
°C
Total Device Dissipation
P
D
58
W
Above 25°C derate by
0.333
W/°C
Storage Temperature Range
T
STG
–40 to +150
°C
Thermal Resistance (T
CASE
= 70°C, 10 W CW)
R
θ
JC
3.0
°C/W
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相關代理商/技術參數 |
參數描述 |
|---|---|
| PTF180101M | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:High Power RF LDMOS Field Effect Transistor 10W,1.0-2.0 GHz |
| PTF180101M V1 | 功能描述:IC FET RF LDMOS 10W TSSOP-10 RoHS:是 類別:分離式半導體產品 >> RF FET 系列:GOLDMOS® 產品目錄繪圖:MOSFET SOT-23-3 Pkg 標準包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數據:- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| PTF180101S | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz |
| PTF180101S V1 | 功能描述:射頻MOSFET電源晶體管 Hi Pwr RF LDMOS FET 10W 1805-1880 MHz RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| PTF180101SV1 | 制造商:Infineon Technologies AG 功能描述: |
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