參數(shù)資料
型號(hào): PTF180101
廠商: INFINEON TECHNOLOGIES AG
英文描述: LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz
中文描述: LDMOS射頻功率場(chǎng)效應(yīng)晶體管10瓦,1805至1880年兆赫,1930-1990 MHz的10瓦,2110年至二一七〇年兆赫
文件頁(yè)數(shù): 9/10頁(yè)
文件大?。?/td> 310K
代理商: PTF180101
Data Sheet
9
2004-02-03
PTF180101
Ordering Information
Type
PTF180101S
Package Outline
32259
Package Description
Thermally enhanced, surface mount
Marking
PTF180101S
Notes: Unless otherwise specified
1.
Interpret dimensions and tolerances per ASME Y14.5M-1994.
2.
Primary dimensions are mm. Alternate dimensions are inches.
3.
Pins: D = drain, S = source, G = gate
4.
Lead thickness: 0.21 ± 0.03 [.008 ± .001]
Package Outline Specifications
Package 32259
2X 3.30
[.130]
1.02 [0.040]
0.51 [0.020]
2X 0.20± 0.03
[.008± .001]
4X R0.25
[R.010]
MAX.
C
L
0°-7°
DRAFT ANGLE
D
G
S
10.16± 0.25
[.400± .010]
6.86
[.270]
2X 1.65± 0.51
[.065± .020]
2X 1.27
[.050]
2X 3.30
[.130]
4X 0.51
[.020]
4X 0.25 MAX
[.010]
6.35
[.250] SQ
6.86
[.270]
6.48
[.255] SQ
0.74± 0.05
[.028± .002]
1.78
[.070]
2.99 ± 0.38
[1.14 ± .010]
H-32259-2-1-2307
LEAD COPLANARITY
BOTTOM OF LEAD
TO BOTTOM OF PACKAGE
.000± .002 (TYP)
60° X 6.60
[60° X .260]
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/products
相關(guān)PDF資料
PDF描述
PTF180101S LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz
PTF180601 LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805-1880 MHz, 1930-1990 MHz
PTF180601C LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805-1880 MHz, 1930-1990 MHz
PTF180601E LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805-1880 MHz, 1930-1990 MHz
PTF180901E GSM/EDGE RF Power FET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PTF180101M 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:High Power RF LDMOS Field Effect Transistor 10W,1.0-2.0 GHz
PTF180101M V1 功能描述:IC FET RF LDMOS 10W TSSOP-10 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:GOLDMOS® 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測(cè)試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測(cè)試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3,SC-59,SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3(TO-236) 包裝:帶卷 (TR) 產(chǎn)品目錄頁(yè)面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
PTF180101S 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz
PTF180101S V1 功能描述:射頻MOSFET電源晶體管 Hi Pwr RF LDMOS FET 10W 1805-1880 MHz RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
PTF180101SV1 制造商:Infineon Technologies AG 功能描述: