參數資料
型號： RC28F256P33T85A
廠商： NUMONYX
元件分類： PROM
英文描述： 16M X 16 FLASH 3V PROM, 85 ns, PBGA64
封裝： BGA-64
文件頁數： 59/96頁
文件大?。?/td> 1378K
代理商： RC28F256P33T85A
Numonyx StrataFlash Embedded Memory (P33)
Datasheet
November 2007
62
Order Number: 314749-05
During a program suspend, deasserting CE# places the device in standby, reducing
active current. VPP must remain at its programming level, and WP# must remain
unchanged while in program suspend. If RST# is asserted, the device is reset.
11.3.5
Program Resume
The Resume command instructs the device to continue programming, and
automatically clears Status Register bits SR[7,2]. This command can be written to any
address. If error bits are set, the Status Register should be cleared before issuing the
next instruction. RST# must remain deasserted (see Figure 34, “Program Suspend/
11.3.6
Program Protection
When VPP = VIL, absolute hardware write protection is provided for all device blocks. If
VPP is at or below VPPLK, programming operations halt and SR[3] is set indicating a VPP-
level error. Block lock registers are not affected by the voltage level on VPP; they may
still be programmed and read, even if VPP is less than VPPLK.
11.4
Erase Operations
Flash erasing is performed on a block basis. An entire block is erased each time an
erase command sequence is issued, and only one block is erased at a time. When a
block is erased, all bits within that block read as logical ones. The following sections
describe block erase operations in detail.
11.4.1
Block Erase
Block erase operations are initiated by writing the Block Erase Setup command to the
address of the block to be erased (see Section 9.6, “Device Command Bus Cycles” on
page 44). Next, the Block Erase Confirm command is written to the address of the
block to be erased. If the device is placed in standby (CE# deasserted) during an erase
operation, the device completes the erase operation before entering standby. VPP must
be above VPPLK and the block must be unlocked (see Figure 37, “Block Erase Flowchart”
Figure 30: Example VPP Supply Connections
Factory Programming with V
PP = VPPH
Complete write/Erase Protection when V
PP ≤ VPPLK
VCC
VPP
VCC
VPP
Low Voltage and Factory Programming
Low-voltage Programming only
Logic Control of Device Protection
VCC
VPP
Low Voltage Programming Only
Full Device Protection Unavailable
VCC
VPP
≤ 10K Ω
V
PP
V
CC
V
CC
PROT #
V
CC
V
PP=VPPH
V
CC
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RC28F320C3 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 VOLT ADVANCED+ BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
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