參數(shù)資料
型號： SI3230PPQX-EVB
廠商： Silicon Laboratories Inc
文件頁數(shù)： 87/108頁
文件大?。?/td> 0K
描述： BOARD EVAL W/DISCRETE INTERFACE
標(biāo)準(zhǔn)包裝： 1
系列： ProSLIC®
主要目的： 接口，模擬前端（AFE）
已用 IC / 零件： Si3230
已供物品： 板，CD
Si3230
8
Preliminary Rev. 0.96
Not
Recommended
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Trapezoidal Ring Crest
Factor Accuracy
Crest factor = 1.3
–.05
—
.05
Sinusoidal Ring Crest
Factor
RCF
1.35
—
1.45
Ringing Frequency Accuracy
f = 20 Hz
–1
—
1
%
Ringing Cadence Accuracy
Accuracy of ON/OFF Times
–50
—
50
ms
Calibration Time
CAL to CAL Bit
—
600
ms
Power Alarm Threshold
Accuracy
At Power Threshold = 300 mW
–25
—
25
%
*Note:
DC resistance round trip; 160
corresponds to 2 kft 26 gauge AWG.
Table 5. Monitor ADC Characteristics
(VDDA, VDDD = 3.13 to 5.25 V, TA = 0 to 70°C for K-Grade, –40 to 85°C for B-Grade)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Differential Nonlinearity
(6-bit resolution)
DNLE
–1/2
—
1/2
LSB
Integral Nonlinearity
(6-bit resolution)
INLE
–1
—
1
LSB
Gain Error (voltage)
—
10
%
Gain Error (current)
—
20
%
Table 6. Si3230 DC Characteristics, VDDA = VDDD = 5.0 V
(VDDA,VDDD = 4.75 V to 5.25 V, TA = 0 to 70°C for K-Grade, –40 to 85°C for B-Grade)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
High Level Input Voltage
VIH
0.7 x VDDD
——
V
Low Level Input Voltage
VIL
——
0.3 x VDD
D
V
High Level Output Voltage
VOH
DIO1,DIO2,SDITHRU:IO = –4 mA
SDO:IO = –8 mA
VDDD – 0.6
—
V
DOUT: IO = –40 mA
VDDD – 0.8
—
V
Low Level Output Voltage
VOL
DIO1,DIO2,DOUT,SDITHRU:
IO = 4 mA
SDO,INT:IO = 8 mA
——
0.4
V
Input Leakage Current
IL
–10
—
10
A
Table 4. Linefeed Characteristics (Continued)
(VDDA, VDDD = 3.13 to 5.25 V, TA = 0 to 70°C for K-Grade, –40 to 85°C for B-Grade)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
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