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參數(shù)資料
| 型號(hào)： | SI4126M-EVB |
| 廠商： | Silicon Laboratories Inc |
| 文件頁(yè)數(shù)： | 33/34頁(yè) |
| 文件大?。?/td> | 0K |
| 描述： | BOARD EVALUATION FOR SI4126 |
| 標(biāo)準(zhǔn)包裝： | 1 |
| 類型： | 合成器 |
| 適用于相關(guān)產(chǎn)品： | SI4126 |
| 已供物品： | 板，CD |
| 其它名稱： | 336-1112 |
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Si4136/Si4126
8
Rev. 1.41
Table 5. RF and IF Synthesizer Characteristics
(VDD = 2.7 to 3.6 V, TA = –40 to 85 °C)
Parameter1
Symbol
Test Condition
Min
Typ
Max
Unit
XIN Input Frequency
f
REF
XINDIV2 = 0
2
—
25
MHz
XIN Input Frequency
fREF
XINDIV2 = 1
25
—
50
MHz
Reference Amplifier Sensitivity
VREF
0.5
—
VDD
+0.3 V
VPP
Phase Detector Update Frequency
f
f= fREF/R for
XINDIV2 = 0
f= fREF/2R for
XINDIV2 = 1
0.010
—
1.0
MHz
RF1 VCO Tuning Range2
2300
—
2500
MHz
RF2 VCO Tuning Range2
2025
—
2300
MHz
IF VCO Center Frequency Range
fCEN
526
—
952
MHz
IFOUT Tuning Range from fCEN
with IFDIV
62.5
—
1000
MHz
IFOUT VCO Tuning Range from fCEN
Note: L ±10%
–5
—
5
%
RF1 VCO Pushing
Open loop
—
0.75
—
MHz/V
RF2 VCO Pushing
—
0.65
—
MHz/V
IF VCO Pushing
—
0.10
—
MHz/V
RF1 VCO Pulling
VSWR = 2:1, all
phases, open loop
—
0.250
—
MHz p-p
RF2 VCO Pulling
—
0.100
—
MHz p-p
IF VCO Pulling
—
0.025
—
MHz p-p
RF1 Phase Noise
1 MHz offset
—
–130
—
dBc/Hz
RF1 Integrated Phase Error
100 Hz to 100 kHz
—
1.2
—
degrees
rms
RF2 Phase Noise
1 MHz offset
—
–131
—
dBc/Hz
RF2 Integrated Phase Error
100 Hz to 100 kHz
—
1.0
—
degrees
rms
IF Phase Noise at 800 MHz
100 kHz offset
—
–104
—
dBc/Hz
IF Integrated Phase Error
100 Hz to 100 kHz
—
0.4
—
degrees
rms
Notes:
1. f(RF) = 1 MHz, f(IF) = 1 MHz, RF1 = 2.4 GHz, RF2 = 2.1 GHz, IFOUT = 800 MHz, LPWR = 0, for all parameters
unless otherwise noted.
2. RF VCO tuning range limits are fixed by inductance of internally bonded wires.
3. From powerup request (PWDN
or SEN during a write of 1 to bits PDIB and PDRB in Register 2) to RF and IF
synthesizers ready (settled to within 0.1 ppm frequency error).
4. From powerdown request (PWDN
, or SENduring a write of 0 to bits PDIB and PDRB in Register 2) to supply current
equal to IPWDN.
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