參數(shù)資料
型號(hào): SI4113M-EVB
廠(chǎng)商: Silicon Laboratories Inc
文件頁(yè)數(shù): 1/36頁(yè)
文件大?。?/td> 0K
描述: BOARD EVALUATION FOR SI4113
標(biāo)準(zhǔn)包裝: 1
類(lèi)型: 合成器
適用于相關(guān)產(chǎn)品: SI4113
已供物品: 板,CD
其它名稱(chēng): 336-1100
Rev. 1.61 1/10
Copyright 2010 by Silicon Laboratories
Si4133
Si4123/22/13/12
D UAL-B AND RF S YNTHESIZER WITH I NTEGRATED VCO S
F OR WIRELESS C OMMUNICATIONS
F EATURES
Applications
Description
The Si4133 is a monolithic integrated circuit that performs both IF and dual-
band RF synthesis for wireless communications applications. The Si4133
includes three VCOs, loop filters, reference and VCO dividers, and phase
detectors. Divider and powerdown settings are programmable with a three-
wire serial interface.
Functional Block Diagram
Dual-band RF synthesizers
RF1: 900 MHz to 1.8 GHz
RF2: 750 MHz to 1.5 GHz
IF synthesizer
IF: 62.5 to 1000 MHz
Integrated VCOs, loop filters,
varactors, and resonators
Minimal (2) number of external
components required
Low phase noise
Programmable powerdown modes
1 A standby current
18 mA typical supply current
2.7 to 3.6 V operation
Packages: 24-pin TSSOP,
28-lead QFN
Lead-free and RoHS compliant
Dual-band communications
Digital cellular telephones GSM 850, E-GSM 900, DCS 1800,
PCS 1900
Digital cordless phones
Analog cordless phones
Wireless local loop
IFOUT
IFLA
IFLB
RFOUT
XIN
PWDN
SDATA
SCLK
SEN
IF
RF2
RF1
Powerdown
Control
Reference
Amplifier
Serial
Interface
AUXOUT
IFDIV
R
N
Phase
Detector
22-bit
Data
Register
Test
Mux
RFLC
RFLD
RFLA
RFLB
Phase
Detector
Phase
Detector
Patents pending
Ordering Information:
Pin Assignments
Si4133-GT
Si4133-GM
124
223
322
421
520
619
718
817
916
10
15
11
14
12
13
SCLK
SDATA
GNDR
RFLD
RFLC
RFLB
GNDR
RFLA
GNDR
RFOUT
VDDR
SEN
VDDI
IFOUT
GNDI
IFLB
IFLA
GNDD
VDDD
GNDD
XIN
PWDN
AUXOUT
GND
Pad
SC
L
K
SD
AT
A
GN
DR
RFLD
RFLC
RFLB
GNDR
RFLA
RFOU
T
VD
DR
SE
N
VD
DI
IF
O
U
T
GNDI
IFLB
IFLA
GN
DD
VDDD
GNDD
XIN
PW
DN
AU
XO
UT
21
20
19
18
17
16
15
8
9
10 11 12 13 14
28 27 26
25 24 23 22
1
2
3
4
5
6
7
GN
DR
GNDR
GNDD
GN
DI
GN
DR
相關(guān)PDF資料
PDF描述
GLAA01A SWITCH SIDE-ROTRY SNAP SPDT
EK64904-11 KIT EVAL FOR 64904 W/CABLES
GLEB24B SWITCH TOP PLUNGER SNAP DPDT
ZMN2405HPDB-C ADDITIONAL ZMN2405HP DEVELOPMENT
DR7002-DK 3G DEVELOPMENT KIT 418 MHZ
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SI4114DY 制造商:VISHAY 制造商全稱(chēng):Vishay Siliconix 功能描述:N-Channel 20-V (D-S) MOSFET
SI4114DY_09 制造商:VISHAY 制造商全稱(chēng):Vishay Siliconix 功能描述:N-Channel 20-V (D-S) MOSFET
Si4114DY-T1-E3 功能描述:MOSFET 20V 20A 5.7W 6.0mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
Si4114DY-T1-GE3 功能描述:MOSFET 20V 20A 5.7W 6.0mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
Si4114G-B-GM 功能描述:射頻無(wú)線(xiàn)雜項(xiàng) GSM Freq Synthesizr for Dir Conversn RoHS:否 制造商:Texas Instruments 工作頻率:112 kHz to 205 kHz 電源電壓-最大:3.6 V 電源電壓-最小:3 V 電源電流:8 mA 最大功率耗散: 工作溫度范圍:- 40 C to + 110 C 封裝 / 箱體:VQFN-48 封裝:Reel